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Metal Impurities in Silicon-Device Fabrication

  • Book
  • © 1995

Overview

Authors:
  1. Klaus Graff

    1. Telefunken Electronic, Heilbronn, Germany
      Heilbronn, Germany

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Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 24)

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Table of contents (9 chapters)

  1. Front Matter

    Pages I-IX
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  2. Introduction

    • Klaus Graff
    Pages 1-4

  3. Common Properties of Transition Metals

    • Klaus Graff
    Pages 5-18

  4. Properties of Transition Metals in Silicon

    • Klaus Graff
    Pages 19-64

  5. Properties of the Main Impurities

    • Klaus Graff
    Pages 65-110

  6. Properties of Rare Impurities

    • Klaus Graff
    Pages 111-131

  7. Detection Methods

    • Klaus Graff
    Pages 132-153

  8. Requirements of Modern Technology

    • Klaus Graff
    Pages 154-163

  9. Gettering of Impurities

    • Klaus Graff
    Pages 164-192

  10. Conclusion and Future Trends

    • Klaus Graff
    Pages 193-196

  11. Back Matter

    Pages 197-218
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Keywords

About this book

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.

Authors and Affiliations

  • Telefunken Electronic, Heilbronn, Germany

    Klaus Graff

  • Heilbronn, Germany

    Klaus Graff

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