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High Magnetic Fields in Semiconductor Physics II

Transport and Optics, Proceedings of the International Conference, Würzburg, Fed. Rep. of Germany, August 22–26, 1988

  • Conference proceedings
  • © 1989

Overview

Editors:
  1. Gottfried Landwehr

    1. Physikalisches Institut, Universität Würzburg, Wüzburg, Fed. Rep. of Germany

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Part of the book series: Springer Series in Solid-State Sciences (SSSOL, volume 87)

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Table of contents (97 papers)

  1. Front Matter

    Pages I-XVI
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  2. Integral Quantum Hall Effect, Electronic States in High Magnetic Fields

    1. Front Matter

      Pages 1-1
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    2. Universality and Scaling of Electronic Transport in the Integral Quantum Hall Effect

      • H. P. Wei, D. C. Tsui, M. A. Paalanen, A. M. M. Pruisken
      Pages 2-9

    3. Scaling and the Integer Quantum Hall Effect

      • A. MacKinnon
      Pages 10-13

    4. Density of States and Coulomb Interactions in the Integer Quantum Hall Effect

      • R. R. Gerhardts, V. Gudmundsson
      Pages 14-23

    5. Electronic States in Two-Dimensional Random Systems in the Presence of a Strong Magnetic Field

      • B. Kramer, Y. Ono, T. Ohtsuki
      Pages 24-35

    6. Conductance Fluctuations on the Quantum Hall Plateaus in GaAs/AlGaAs

      • R. G. Mani, J. R. Anderson
      Pages 36-40

    7. Quantum Hall Effect and Related Magneto-transport in Silicon (001) MOSFETs Under Uniaxial Stress

      • J. Lutz, F. Kuchar, G. Dorda
      Pages 41-44

    8. Effect of Additional Irradiation Induced Scattering Centres on the Quantum Hall Plateau Widths in GaAs-AlxGa1−xAs Heterostructures

      • W. Möhle, H. Adrian, L. Bliek, G. Weimann, W. Schlapp
      Pages 45-49

    9. On the Effect of the Coulomb Interaction in the Quantum Hall Regime

      • H. Nielsen
      Pages 50-53

    10. Structures in the Breakdown Curves of the Quantum Hall Effect in Narrow Channel GaAs/AlGaAs Heterostructures

      • A. Sachrajda, M. D’Iorio, D. Landheer, P. Coleridge, T. Moore
      Pages 54-57

    11. Quantum Hall Effect in Wide Parabolic GaAs/AlxGa1−xAs Wells

      • E. G. Gwinn, P. F. Hopkins, A. J. Rimberg, R. M. Westervelt, M. Sundaram, A. C. Gossard
      Pages 58-61

    12. Correlation Between Magnetotransport and Photoluminescence in the Quantum Hall Effect Regime

      • R. Stepniewski, W. Knap, A. Raymond, G. Martinez, T. Rötger, J. C. Maan et al.
      Pages 62-65

    13. The Influence of Contacts on the Quantized Hall Effect

      • R. Woltjer, M. J. M. de Blank, J. J. Harris, C. T. Foxon, J. P. André
      Pages 66-75

    14. On the Consistency of Approximations to the Landau-Level Broadening by Random Potentials with Large Correlation Length

      • K. Broderix, N. Heldt, H. Leschke
      Pages 76-79

    15. Collective Excitations of Two-Dimensional Electron Solids and Correlated Quantum Liquids in High Magnetic Fields

      • G. Meissner, U. Brockstieger
      Pages 80-84

    16. Many-Valley 2D Electron Systems in Strong Magnetic Fields

      • Yu. Bychkov, S. Iordansky
      Pages 85-93

    17. Interaction of Surface Acoustic Waves with Inversion Electrons on GaAs in Quantizing Magnetic Fields

      • A. Wixforth, J. P. Kotthaus
      Pages 94-103

  3. Fractional Quantum Hall Effect

    1. Front Matter

      Pages 105-105
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    2. The Fractional Quantum Hall Effect at Even Denominators

      • J. P. Eisenstein
      Pages 106-114
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Keywords

About this book

This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon­ ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het­ erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.

Editors and Affiliations

  • Physikalisches Institut, Universität Würzburg, Wüzburg, Fed. Rep. of Germany

    Gottfried Landwehr

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