Polycrystalline Semiconductors

1. Front Matter

   Pages I-VIII

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2. Fundamental Aspects of Grain Boundaries

   1. Front Matter

      Pages 1-1

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   2. Atomic Structure of Grain Boundaries

      • A. Bourret

      Pages 2-17

   3. Computer Calculations of Grain Boundary Energies in Germanium and Silicon

      • H. J. Möller, H. H. Singer

      Pages 18-26

   4. The Geometrical Character of Extended Interfacial Defects in Semiconducting Materials

      • R. C. Pond

      Pages 27-45

   5. Grain Boundary Segregation. Grain Boundary Diffusion

      • Marc Aucouturier

      Pages 47-74

3. Electronic Characterization of Grain Boundaries

   1. Front Matter

      Pages 75-75

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   2. Electronic Properties of Grain Boundaries

      • Jürgen Werner

      Pages 76-94

   3. Electronic States at Grain Boundaries in Semiconductors

      • A. Broniatowski

      Pages 95-117

   4. Electrical Properties of Grain Boundaries in the Presence of Deep Bulk Traps

      • G. Blatter, F. Greuter

      Pages 118-137

   5. Beam Induced Current Characterization in Polycrystalline Semiconductors

      • C. Donolato

      Pages 138-154

4. Properties and Applications of Polycrystalline Silicon

   1. Front Matter

      Pages 155-155

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   2. Optical Properties of Polycrystalline Silicon Films

      • Günther Harbeke

      Pages 156-169

   3. Polycrystalline Silicon in Integrated Circuits

      • H. C. de Graaff

      Pages 170-184

5. Applications of Polycrystalline Semiconductor Compounds

   1. Front Matter

      Pages 185-185

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   2. Electroluminescence in Polycrystalline Semiconductors

      • R. Mach

      Pages 186-208

   3. The Electrical Properties of Oxides Under Conditions of Oxidation, Reduction and Catalysis

      • S. Strässler, A. Reis, D. Wieser

      Pages 209-227

   4. Evolution of Physical Models for ZnO-Varistors

      • Richard Einzinger

      Pages 228-244

6. Back Matter

   Pages 245-248

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In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph­ ous state. The two extremes of this range attract a large amount of inter­ est. On one side, glamorous novel phenomena are being found which can only occur in specially tailored ultra-perfect periodic lattices. On the other side, the exotic and challenging nature of the amorphous state has triggered a surge of activity in recent years. Po1ycrystall i ne semi conductors are in between. They are among the work­ horses in the field, useful in many applications, a handy solution to many practical problems and still - they have not received in the past the amount of research interest that they deserve. It is the aim of the present book to improve this situation. The book originated from the lectures and seminars presented at the course on "Po1ycrystall i ne Semi conductors - Physical Properties and Applications" of "the International School on Materials Scien­ ce and Technology, hel d at the Centre for Sci entifi c Culture "Ettore Majorana" in Erice, Italy, July 1-15, 1984.

• crystal
• defects
• material
• materials
• nature
• optical properties
• research
• semiconductor
• semiconductors
• structure

• Laboratories RCA Ltd., Zürich, Switzerland

  Günther Harbeke

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