Ion Implantation in Semiconductors

1. Front Matter

   Pages i-xiii

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2. Disorder in Ion Implanted Silicon

   1. Ionization and Thermal Dependences of Implantation Disorder in Silicon

      • S. T. Picraux, F. L. Vook

      Pages 1-1

   2. Localized Mode of Substitutional Carbon in Ion-Implanted Silicon

      • H. J. Stein

      Pages 2-6

   3. Inventory of Paramagnetic Defects in Ion-Implanted Silicon

      • K. L. Brower, W. Beezhold

      Pages 7-7

   4. Structural Differences in Light and Heavy Ion Disorder in Si Studied by Single and Double Alignment Channeling Techniques

      • J. K. Hirvonen, W. L. Brown, P. M. Glotin

      Pages 8-16

   5. Investigation of Ion Implantation Damage with Stress Measurements

      • E. P. EerNisse

      Pages 17-22

   6. Energy Levels of Defects in Ion Implanted Silicon

      • D. Eirug Davies, S. Roosild

      Pages 23-32

   7. Photoconductivity of Boron Implanted Silicon

      • B. Nétange, M. Cherki, P. Baruch

      Pages 33-38

   8. Electron Paramagnetic Resonance on Divacancies in Phosphorus-Implanted Silicon

      • J. G. de Wit, C. A. J. Ammerlaan

      Pages 39-46

3. Implantation of Boron and Phosphorus into Silicon

   1. Distribution of Boron Implanted Silicon

      • T. E. Seidel

      Pages 47-57

   2. Phosphorus Channeled in Silicon: Profiles and Electrical Activity

      • R. A. Moline, G. W. Reutlinger

      Pages 58-69

   3. Enhanced Annealing Effects of Boron Implanted Layers in Silicon by Post-Implantation of Silicon Ions

      • L.-O. Bauer

      Pages 70-78

   4. Electrical Profiles of Ion Implanted Silicon and their Comparison with Defect Structures

      • S. M. Davidson

      Pages 79-84

   5. A New Method for Boron Doping of Silicon by Implantation of BF2-Molecules

      • H. Müller, H. Ryssel, I. Ruge

      Pages 85-95

   6. Crystal Defects and Electrical Properties in Ion-Implanted Silicon

      • M. Tamura, T. Ikeda, T. Tokuyama

      Pages 96-102

   7. Amorphization of Silicon Crystals Bombarded by 30 keV Phosphorus Ions at Different Temperatures

      • K. H. Eklund, Å. Andersson

      Pages 103-109

   8. Additional Ion Bombardment of Well Annealed Silicon Crystals Implanted with Phosphorus and Arsenic

      • Åke Andersson, Gösta Swenson

      Pages 110-118

   9. The Influence of Ion Beam Current Densities on the Electrical Properties of Boron Implanted Silicon

      • N. G. Blamires

      Pages 119-123

   10. The Evaluation of Electrically Active Damage in Hot, Phosphorus Implantations in Silicon by Means of Hall-Effect Measurements

       • C. MacDonald, G. Galster

       Pages 124-133

4. Implantation into Compound Semiconductors

   1. Backscattering Analysis and Electrical Behavior of SiC Implanted with 40 keV Indium

      • R. R. Hart, H. L. Dunlap, O. J. Marsh

      Pages 134-140

In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power­ ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori­ ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.

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