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Silicon-Based Millimeter-Wave Devices

  • Book
  • © 1994

Overview

Editors:
  1. Johann-Friedrich Luy

    1. Forschung und Technik, Daimler-Benz AG, Ulm, Germany

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    You can also search for this editor in PubMed   Google Scholar

  2. Peter Russer

    1. Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Series in Electronics and Photonics (SSEP, volume 32)

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Table of contents (9 chapters)

  1. Front Matter

    Pages I-XVI
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  2. Fundamentals

    • P. Russer, E. Biebl
    Pages 1-46

  3. Transit-Time Devices

    • J.-F. Luy
    Pages 47-88

  4. Schottky Contacts on Silicon

    • Jürgen H. Werner, Uwe Rau
    Pages 89-148

  5. SiGe Heterojunction Bipolar Transistors

    • A. Gruhle
    Pages 149-192

  6. Silicon Millimeter-Wave Integrated Circuits

    • J. Buechler
    Pages 193-214

  7. Self-Mixing Oscillators

    • M. Claassen
    Pages 215-239

  8. Silicon Millimeter-Wave Integrated Circuit Technology

    • K. M. Strohm
    Pages 241-284

  9. Future Devices

    • M. Willander, Y. Fu, Q. Chen
    Pages 285-322

  10. Future Applications

    • W. Menzel
    Pages 323-338

  11. Back Matter

    Pages 339-343
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Keywords

About this book

Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.

Editors and Affiliations

  • Forschung und Technik, Daimler-Benz AG, Ulm, Germany

    Johann-Friedrich Luy

  • Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany

    Peter Russer

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