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Amorphous and Crystalline Silicon Carbide II

Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988

  • Conference proceedings
  • © 1989

Overview

Editors:
  1. Mahmud M. Rahman

    1. Microelectronics Laboratory, Santa Clara University, Santa Clara, USA

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  2. Cary Y.-W. Yang

    1. Microelectronics Laboratory, Santa Clara University, Santa Clara, USA

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    You can also search for this editor in PubMed   Google Scholar

  3. Gary L. Harris

    1. Materials Science Research Center of Excellence, Howard University, USA

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Part of the book series: Springer Proceedings in Physics (SPPHY, volume 43)

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Table of contents (45 papers)

  1. Front Matter

    Pages I-X
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  2. Growth of Crystalline Silicon Carbide

    1. Front Matter

      Pages 1-1
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    2. Crystalline SiC on Si and High Temperature Operational Devices

      • H. Matsunami
      Pages 2-7

    3. Heteroepitaxial Growth of Cubic SiC on a Si Substrate Using the Si2H6-C2H2-H2 System

      • S. Nishino, J. Saraie
      Pages 8-13

    4. Chemical Vapor Deposition of Single Crystal β-SiC

      • J. A. Powell, L. G. Matus
      Pages 14-19

    5. β-Silicon Carbide Prepared by Rapid Thermal Chemical Vapor Deposition

      • J. C. Liao, J. L. Crowley, P. H. Klein
      Pages 20-25

    6. Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue LEDs

      • T. Nakata, K. Koga, Y. Matsushita, Y. Ueda, T. Niina
      Pages 26-34

    7. Polytype Change of Silicon Carbide at High Temperatures

      • W. S. Yoo, S. Nishino, H. Matsunami
      Pages 35-39

    8. Epitaxial Growth of (SiC)XGe1-x on Silicon Substrates

      • M. G. Spencer, G. L. Harris, S. L. Richardson, M. F. Mahmood, A. M. Jones
      Pages 40-41

    9. One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD of SiC in a Vertical Reactor

      • M. E. Aluko, C. Mbeledogu
      Pages 42-42

  3. Growth of Amorphous, Microcrystalline, and Polycrystalline Silicon Carbide

    1. Front Matter

      Pages 43-43
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    2. Properties of a-SiC:H Films Prepared with a Field-Enhanced RF Glow-Discharge System Field-Enhanced RF Glow-Discharge System

      • T. Asano, D. Sugiarto, M. Ju, M. M. Rahman, C. Y. Yang
      Pages 44-48

    3. Preparation of Microcrystalline Silicon Carbide Thin Films for the Emitter of Si HBTs

      • T. Fukazawa, K. Sasaki, S. Furukawa
      Pages 49-53

    4. High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method

      • M. Nishikuni, H. Dohjoh, K. Ninomiya, N. Nakamura, T. Matsuoka, S. Tsuda et al.
      Pages 54-59

    5. Electron-Cyclotron-Resonance Plasma Deposition of Carbon onto Silicon

      • J. Pankove, V. Hornback, S. Sritharan, J. Wilson, S. Asher, R. Dhere et al.
      Pages 60-65

    6. Preparation and Characterization of Amorphous SiC Film by a Liquid Route

      • C.-J. Chu, G. D. Soraru, F. Babonneau, J. D. Mackenzie
      Pages 66-71

  4. Characterization of Silicon Carbide

    1. Front Matter

      Pages 73-73
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    2. Gap States of Highly Photosensitive a-SiC:H

      • S. Akita, Y. Nakayama, T. Kawamura
      Pages 74-79

    3. X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films

      • A. S. Byrne, M. Ju, T. Asano, M. M. Rahman, C. Y. Yang
      Pages 80-84

    4. Doping-Induced Structural Change in Amorphous Silicon (Carbon) Hydrogen Alloy

      • Wen-Jyh Sah, Si-Chen Lee
      Pages 85-88
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Keywords

About this book

This volume contains written versions of the papers presented at the Second Inter­ national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem­ ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in­ ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.

Editors and Affiliations

  • Microelectronics Laboratory, Santa Clara University, Santa Clara, USA

    Mahmud M. Rahman, Cary Y.-W. Yang

  • Materials Science Research Center of Excellence, Howard University, USA

    Gary L. Harris

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