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Physics of Quantum Electron Devices

  • Textbook
  • © 1990

Overview

Editors:
  1. Federico Capasso

    1. Quantum Phenomena and Device Research Department, AT&T Bell Laboratories, Murray Hill, USA

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Part of the book series: Springer Series in Electronics and Photonics (SSEP, volume 28)

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Table of contents (12 chapters)

  1. Front Matter

    Pages I-XVI
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  2. Introduction

    • F. Capasso
    Pages 1-12

  3. The Nature of Molecular Beam Epitaxy and Consequences for Quantum Microstructures

    • A. Madhukar
    Pages 13-60

  4. Nanolithography for Ultra-Small Structure Fabrication

    • H. G. Craighead
    Pages 61-76

  5. Theory of Resonant Tunnelling and Surface Superlattices

    • D. K. Ferry
    Pages 77-105

  6. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields

    • L. Eaves, F. W. Sheard, G. A. Toombs
    Pages 107-146

  7. Microwave and Millimeter-Wave Resonant-Tunnelling Devices

    • T. C. L. G. Sollner, E. R. Brown, W. D. Goodhue, H. Q. Le
    Pages 147-180

  8. Resonant Tunnelling and Superlattice Devices: Physics and Circuits

    • F. Capasso, S. Sen, F. Beltram, A. Y. Cho
    Pages 181-252

  9. Resonant-Tunnelling Hot Electron Transistors (RHET)

    • N. Yokoyama, S. Muto, H. Ohnishi, K. Imamura, T. Mori, T. Inata
    Pages 253-269

  10. Ballistic Electron Transport in Hot Electron Transistors

    • M. Heiblum, M. V. Fischetti
    Pages 271-320

  11. Quantum Interference Devices

    • S. Datta
    Pages 321-352

  12. Carrier Confinement to One and Zero Degrees of Freedom.

    • P. M. Petroff
    Pages 353-366

  13. Quantum Effects in Quasi-One-Dimensional MOSFETs

    • W. J. Skocpol
    Pages 367-399

  14. Back Matter

    Pages 401-403
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Keywords

About this book

The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.

Editors and Affiliations

  • Quantum Phenomena and Device Research Department, AT&T Bell Laboratories, Murray Hill, USA

    Federico Capasso

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