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Physical Chemistry of, in and on Silicon

  • Textbook
  • © 1989

Overview

Authors:
  1. Gianfranco Cerofolini

    1. EniChem, Milano MI, Italy

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    You can also search for this author in PubMed   Google Scholar

  2. Laura Meda

    1. SGS-Thomson Microelectronics, Agrate MI, Italy

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    You can also search for this author in PubMed   Google Scholar

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 8)

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Table of contents (10 chapters)

  1. Front Matter

    Pages I-VIII
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  2. Silicon

    • Gianfranco Cerofolini, Laura Meda
    Pages 1-7

  3. Silicon Phases

    • Gianfranco Cerofolini, Laura Meda
    Pages 8-14

  4. Equilibrium Defects

    • Gianfranco Cerofolini, Laura Meda
    Pages 15-24

  5. Impurities

    • Gianfranco Cerofolini, Laura Meda
    Pages 25-32

  6. Dopants

    • Gianfranco Cerofolini, Laura Meda
    Pages 33-51

  7. Defect-Impurity Interactions

    • Gianfranco Cerofolini, Laura Meda
    Pages 52-58

  8. The High Density Limit

    • Gianfranco Cerofolini, Laura Meda
    Pages 59-69

  9. Surfaces and Interfaces

    • Gianfranco Cerofolini, Laura Meda
    Pages 70-80

  10. Gettering

    • Gianfranco Cerofolini, Laura Meda
    Pages 81-92

  11. Device Processing

    • Gianfranco Cerofolini, Laura Meda
    Pages 93-103

  12. Back Matter

    Pages 105-122
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Keywords

About this book

The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every­ day experience, this choice being dictated merely by their greater knowl­ edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem­ istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem­ istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan­ tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.

Authors and Affiliations

  • EniChem, Milano MI, Italy

    Gianfranco Cerofolini

  • SGS-Thomson Microelectronics, Agrate MI, Italy

    Laura Meda

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