Skip to main content
  • Conference proceedings
  • © 1987

Semiconductor Interfaces: Formation and Properties

Proceedings of the Workkshop, Les Houches, France February 24–March 6, 1987

Part of the book series: Springer Proceedings in Physics (SPPHY, volume 22)

Buy it now

Buying options

eBook USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

This is a preview of subscription content, log in via an institution to check for access.

Table of contents (28 papers)

  1. Front Matter

    Pages I-XI
  2. Introduction

    1. Front Matter

      Pages 1-1
  3. Experimental Study of the Formation of Semiconductor Interfaces

    1. Front Matter

      Pages 9-9
  4. Electronic Properties of Interfaces

    1. Front Matter

      Pages 161-161

About this book

The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom­ mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel­ oped, powerful techniques such as scanning tunneling microscopy, high reso­ lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.

Editors and Affiliations

  • Campus de Luminy, C.R.M.C.2, CNRS, Marseille, Cedex 09, France

    Guy Lay

  • L.E.P.E.S., CNRS, Grenoble, France

    Jacques Derrien

  • Centre de Physique Théorique, Les Houches, France

    Nino Boccara

Bibliographic Information

Buy it now

Buying options

eBook USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access