Skip to main content
SpringerLink
Log in
Book cover

Insulating Films on Semiconductors

Proceedings of the Second International Conference, INFOS 81, Erlangen, Fed. Rep. of Germany, April 27–29, 1981

  • Conference proceedings
  • © 1981

Overview

Editors:
  1. Max J. Schulz

    1. Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, Fed. Rep. of Germany

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  2. Gerhard Pensl

    1. Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, Fed. Rep. of Germany

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Series in Electronics and Photonics (SSEP, volume 7)

This is a preview of subscription content, log in via an institution to check access.

Access this book

Log in via an institution
eBook USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (51 papers)

  1. Front Matter

    Pages I-X
    Download chapter PDF

  2. Si-SiO2 Interface

    1. Front Matter

      Pages 1-1
      Download chapter PDF

    2. Electronic Structure of the Si-SiO2 Interface

      • Frank Herman
      Pages 2-18

    3. Morphology of the Si-SiO2 Interface

      • C. R. Helms
      Pages 19-25

    4. Influence of Oxidation Parameters on Atomic Roughness at the Si-SiO2 Interface

      • P. O. Hahn, M. Henzler
      Pages 26-29

    5. Electronic and Optical Properties of SiO x

      • K. Hübner, E. Rogmann, G. Zuther
      Pages 30-34

    6. Hydrogenation of Defects at the Si-SiO2 Interface

      • N. M. Johnson, D. K. Biegelsen, M. D. Moyer
      Pages 35-38

    7. Stress Behaviour of Hydrogen Annealed Interface States

      • L. Risch
      Pages 39-42

    8. On the Si/SiO2 Interface Recombination Velocity

      • M. W. Hillen, J. Holsbrink, J. F. Verwey
      Pages 43-47

    9. Optical Excitation of MOS-Interface-States

      • K. Blumenstock, M. Schulz
      Pages 48-53

  3. Thin Insulating Films

    1. Front Matter

      Pages 55-55
      Download chapter PDF

    2. Langmuir-Blodgett Films on Semiconductors

      • G. G. Roberts
      Pages 56-67

    3. A Study of MIS Structures Prepared Under Ultra-High-Vacuum Conditions

      • M. Commandré, J. Derrien, A. Cros, F. Salvan, G. Sarrabayrouse, J. Buxo
      Pages 68-72

    4. Electrical Properties of Ultrathin Oxide Layers Formed by DC Plasma Anodization

      • R. B. Beck, A. Jakubowski, J. Ruzyłło
      Pages 73-77

    5. Influence of Different Technologies of Metal Deposition and of Oxide Growth on the Electronic Properties of MIS Tunnel Diodes

      • Georges Pananakakis, Georges Kamarinos, Vincent Le Goascoz
      Pages 78-81

    6. Photoelectric Methods as a Tool for the Analysis of Current Flow Mechanism in MIS Tunnel Diodes

      • Stanislaw K. Krawczyk
      Pages 82-85

  4. Charge Injection into Insulators

    1. Front Matter

      Pages 87-87
      Download chapter PDF

    2. Charge Injection into Wide Energy Band-Gap Insulators

      • D. J. DiMaria
      Pages 88-103

    3. Oxide and Interface Charge Generation by Electron Injection in MOS Devices

      • F. J. Feigl, D. R. Young, D. J. DiMaria, S. Lai
      Pages 104-110

    4. Trapping Characteristics in SiO2

      • D. R. Wolters, J. F. Verwey
      Pages 111-117
Back to top

Keywords

About this book

The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The topics range from the basic physical understanding of the properties of insulating films and their interface to semiconductors to the discussion of stability and dielectric strength as well as growing and deposition techniques which are relevant for technical applications. Strong emphasis was given to the semiconductor silicon and its native oxide; however, sessions on compound semiconductors and other insulating films also raised strong interest. The proceedings survey the present state of our understanding of the system of insulating films on semiconductors. As a new aspect of the topic, the properties of semiconductors deposited and laser processed on insulating films was in­ cluded for the first time.

Editors and Affiliations

  • Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, Fed. Rep. of Germany

    Max J. Schulz, Gerhard Pensl

Bibliographic Information

  • Book Title: Insulating Films on Semiconductors

  • Book Subtitle: Proceedings of the Second International Conference, INFOS 81, Erlangen, Fed. Rep. of Germany, April 27–29, 1981

  • Editors: Max J. Schulz, Gerhard Pensl

  • Series Title: Springer Series in Electronics and Photonics

  • DOI: https://doi.org/10.1007/978-3-642-68247-6

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag Berlin Heidelberg 1981

  • Softcover ISBN: 978-3-642-68249-0Published: 19 January 2012

  • eBook ISBN: 978-3-642-68247-6Published: 12 March 2013

  • Series ISSN: 0172-5734

  • Edition Number: 1

  • Number of Pages: X, 318

  • Topics: Surfaces and Interfaces, Thin Films

Publish with us

Policies and ethics

Back to top

Search

Navigation