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Secondary Ion Mass Spectrometry SIMS II

Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979

  • Conference proceedings
  • © 1979

Overview

Editors:
  1. A. Benninghoven

    1. Physikalisches Institut der Universität Münster, Germany

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  2. C. A. Evans

    1. Charles Evans & Associates, San Mateo, USA

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  3. R. A. Powell

    1. Varian Associates, Palo Alto, USA

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  4. R. Shimizu

    1. Osaka University, Osaka, Japan

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  5. H. A. Storms

    1. General Electric Vallecitos Nuclear Center, Pleasanton, USA

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Part of the book series: Springer Series in Chemical Physics (CHEMICAL, volume 9)

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Table of contents (87 papers)

  1. Front Matter

    Pages I-XIII
    Download chapter PDF

  2. Fundamentals

    1. Front Matter

      Pages 1-1
      Download chapter PDF

    2. The Dynamics of Ion-Solid Interactions: A Basis for Understanding SIMS

      • Nicholas Winograd
      Pages 2-6

    3. Simultaneous Measurements of Photon and Secondary Ion Emissions from Ion-Bombarded Metal Surfaces

      • T. Okutani, R. Shimizu
      Pages 7-11

    4. Atom Ejection Mechanisms and Models

      • Don E. Harrison Jr., Barbara J. Garrison, Nicholas Winograd
      Pages 12-14

    5. New Models of Sputtering and Ion Knock-On Mixing

      • S. A. Schwarz, C.R. Helms
      Pages 15-17

    6. Clustering Distances in Secondary Ion Mass Spectrometry

      • F. Honda, Y. Fukuda, J. W. Rabalais
      Pages 18-20

    7. Basic Aspects in the Sputtering of Atoms, Ions, and Excited States

      • Roger Kelly
      Pages 21-25

    8. Cluster Formation in SIMS: CO on PdAg

      • George J. Slusser
      Pages 26-28

    9. Effect of Partial Oxygen Pressure on Metal Single Crystals Bombarded by Noble Gas Ions

      • M. Bernheim, G. Slodzian
      Pages 29-32

    10. A Comparison of Absolute Yields of Excited Neutrals and Positive Ions from Ion-Bombarded Surfaces

      • P. Williams, I. S. T. Tsong, S. Tsuji
      Pages 33-33

    11. Correlation Between the Spectral Ionization Probability of Sputtered Atoms and the Electron Density of States

      • T. R. Lundquist
      Pages 34-36

    12. Physical Aspects of the Valence Model’s Parameters

      • C. Plog, W. Gerhard
      Pages 37-39

    13. Negative Ion Emission from Surfaces Covered with Cesium and Bombarded by Noble Gas Ions

      • M. Bernheim, J. Rebière, G. Slodzian
      Pages 40-43

    14. Angle-Resolved SIMS—A New Technique for the Determination of Surface Structure

      • B. J. Garrison, S. P. Holland, N. Winograd
      Pages 44-46
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Keywords

Editors and Affiliations

  • Physikalisches Institut der Universität Münster, Germany

    A. Benninghoven

  • Charles Evans & Associates, San Mateo, USA

    C. A. Evans

  • Varian Associates, Palo Alto, USA

    R. A. Powell

  • Osaka University, Osaka, Japan

    R. Shimizu

  • General Electric Vallecitos Nuclear Center, Pleasanton, USA

    H. A. Storms

Bibliographic Information

  • Book Title: Secondary Ion Mass Spectrometry SIMS II

  • Book Subtitle: Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979

  • Editors: A. Benninghoven, C. A. Evans, R. A. Powell, R. Shimizu, H. A. Storms

  • Series Title: Springer Series in Chemical Physics

  • DOI: https://doi.org/10.1007/978-3-642-61871-0

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag New York 1979

  • Softcover ISBN: 978-3-642-61873-4Published: 13 December 2011

  • eBook ISBN: 978-3-642-61871-0Published: 11 November 2013

  • Series ISSN: 0172-6218

  • Series E-ISSN: 2364-9003

  • Edition Number: 1

  • Number of Pages: XIV, 300

  • Topics: Mass Spectrometry, Physics, general

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