Skip to main content
SpringerLink
Log in

Metal Impurities in Silicon-Device Fabrication

  • Book
  • © 2000

Overview

Authors:
  1. Klaus Graff

    1. Telefunken Electronic, Heilbronn, Germany

    View author publications

    You can also search for this author in PubMed   Google Scholar

  • The author, in close cooperation with scientists from MPG Stuttgart (Prof. Queisser and Dr. J. Wehr), has extended and updated the treatment that is most important for semiconductor technology

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 24)

This is a preview of subscription content, log in via an institution to check access.

Access this book

Log in via an institution
eBook USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (9 chapters)

  1. Front Matter

    Pages I-XV
    Download chapter PDF

  2. Introduction

    • Klaus Graff
    Pages 1-4

  3. Common Properties of Transition Metals

    • Klaus Graff
    Pages 5-19

  4. Properties of Transition Metals in Silicon

    • Klaus Graff
    Pages 20-75

  5. Properties of the Main Impurities

    • Klaus Graff
    Pages 76-130

  6. Properties of Rare Impurities

    • Klaus Graff
    Pages 131-162

  7. Detection Methods

    • Klaus Graff
    Pages 163-189

  8. Requirements of Modern Technology

    • Klaus Graff
    Pages 190-200

  9. Gettering of Impurities

    • Klaus Graff
    Pages 201-232

  10. Conclusion and Future Trends

    • Klaus Graff
    Pages 233-238

  11. Back Matter

    Pages 239-269
    Download chapter PDF
Back to top

Keywords

About this book

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.

Authors and Affiliations

  • Telefunken Electronic, Heilbronn, Germany

    Klaus Graff

Bibliographic Information

Publish with us

Policies and ethics

Back to top

Search

Navigation