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Low Power and Reliable SRAM Memory Cell and Array Design

  • Book
  • © 2011

Overview

Editors:
  1. Koichiro Ishibashi

    1. The University of Electro-Communications, Tokyo, Japan

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    You can also search for this editor in PubMed   Google Scholar

  2. Kenichi Osada

    1. Hitachi Ltd., Kokubunji-shi, Tokyo, Japan

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  • Basic book on memory design
  • Combines the aspects of SRAM technique, analysis and design
  • A valuable reference work for researchers and engineers alike
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Advanced Microelectronics (MICROELECTR., volume 31)

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-xi
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  2. Introduction

    • Koichiro Ishibashi
    Pages 1-4

  3. Fundamentals of SRAM Memory Cell

    • Kenichi Osada
    Pages 5-10

  4. Electrical Stability (Read and Write Operations)

    • Masanao Yamaoka, Yasumasa Tsukamoto
    Pages 11-24

  5. Low Power Memory Cell Design Technique

    • Kenichi Osada, Masanao Yamaoka
    Pages 25-41

  6. Low-Power Array Design Techniques

    • Koji Nii, Masanao Yamaoka, Kenichi Osada
    Pages 43-88

  7. Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM

    • Eishi Ibe, Kenichi Osada
    Pages 89-124

  8. Future Technologies

    • Koji Nii, Masanao Yamaoka
    Pages 125-138

  9. Back Matter

    Pages 139-143
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Keywords

About this book

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Editors and Affiliations

  • The University of Electro-Communications, Tokyo, Japan

    Koichiro Ishibashi

  • Hitachi Ltd., Kokubunji-shi, Tokyo, Japan

    Kenichi Osada

Bibliographic Information

  • Book Title: Low Power and Reliable SRAM Memory Cell and Array Design

  • Editors: Koichiro Ishibashi, Kenichi Osada

  • Series Title: Springer Series in Advanced Microelectronics

  • DOI: https://doi.org/10.1007/978-3-642-19568-6

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Engineering, Engineering (R0)

  • Copyright Information: Springer-Verlag Berlin Heidelberg 2011

  • Hardcover ISBN: 978-3-642-19567-9Published: 18 August 2011

  • Softcover ISBN: 978-3-642-27018-5Published: 27 November 2013

  • eBook ISBN: 978-3-642-19568-6Published: 18 August 2011

  • Series ISSN: 1437-0387

  • Series E-ISSN: 2197-6643

  • Edition Number: 1

  • Number of Pages: XII, 144

  • Topics: Electronics and Microelectronics, Instrumentation, Engineering, general

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