Semiconductor Surfaces and Interfaces

1. Front Matter

   Pages I-XVI

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2. Introduction

   • Winfried Mönch

   Pages 1-20

3. Surface Space-Charge Region in Thermal Equilibrium

   • Winfried Mönch

   Pages 21-31

4. Surface States

   • Winfried Mönch

   Pages 33-57

5. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium

   • Winfried Mönch

   Pages 59-65

6. Surface Space-Charge Region in Non-Equilibrium

   • Winfried Mönch

   Pages 67-80

7. Interface States

   • Winfried Mönch

   Pages 81-103

8. Cleaved {110} Surfaces of III–V and II–VI Compound Semiconductors

   • Winfried Mönch

   Pages 105-144

9. {100} Surfaces of III–V, II–VI, and I–VII Compound Semiconductors with Zincblende Structure

   • Winfried Mönch

   Pages 145-168

10. {100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide

    • Winfried Mönch

    Pages 169-191

11. Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces

    • Winfried Mönch

    Pages 193-218

12. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces

    • Winfried Mönch

    Pages 219-239

13. Phase Transitions on Silicon and Germanium {111} Surfaces

    • Winfried Mönch

    Pages 241-253

14. {111} Surfaces of Compounds with Zincblende Structure

    • Winfried Mönch

    Pages 255-261

15. Monovalent Adatoms

    • Winfried Mönch

    Pages 263-328

16. Group-III Adatoms on Silicon Surfaces

    • Winfried Mönch

    Pages 329-338

17. Group-V Adatoms

    • Winfried Mönch

    Pages 339-351

18. Oxidation of Silicon and III–V Compound Semiconductors

    • Winfried Mönch

    Pages 353-376

19. Surface Passivation by Adsorbates and Surfactants

    • Winfried Mönch

    Pages 377-384

20. Semiconductor Interfaces

    • Winfried Mönch

    Pages 385-481

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

• Materials science and engineering
• PAS
• Physics of semiconductors
• Semiconductor
• Semiconductor devices
• Solid state physics
• Surfaces and Interfaces

From the reviews of the third edition:

"The monograph covers comprehensively experimental and theoretical methods to study semiconductor surfaces and interfaces. These research topics include aspects of physics, chemistry as well as of electronic devices, and are a very rapidly developing scientific area. The book includes more than 1500 references and is divided into nineteen chapters. The book is the third revised edition … ." (I. A. Parinov, Zentralblatt MATH, Vol. 994 (19), 2002)

• Laboratorium für Festkörperphysik, Gerhard-Mercator-Universität Duisburg, Duisburg, Germany

  Winfried Mönch

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