The Blue Laser Diode

1. Front Matter

   Pages I-XVI

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2. Introduction

   • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

   Pages 1-5

3. Background

   • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

   Pages 7-28

4. Physics of Gallium Nitride and Related Compounds

   • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

   Pages 29-45

5. GaN Growth

   • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

   Pages 47-88

6. p-Type GaN Obtained by Electron Beam Irradiation

   • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

   Pages 89-101

7. n-Type GaN

   • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

   Pages 103-112

8. p-Type GaN

   • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

   Pages 113-147

9. InGaN

   • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

   Pages 149-192

10. Zn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

    Pages 193-214

11. InGaN Single-Quantum-Well LEDs

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

    Pages 215-235

12. Room-Temperature Pulsed Operation of Laser Diodes

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

    Pages 237-278

13. Emission Mechanisms of LEDs and LDs

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

    Pages 279-289

14. Room Temperature CW Operation of InGaN MQW LDs

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

    Pages 291-318

15. Latest Results: Lasers with Self-Organized InGaN Quantum Dots

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

    Pages 319-333

16. Conclusions

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol

    Pages 335-337

17. Back Matter

    Pages 339-368

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Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.

• Crystal Growth
• Laser
• Lasers
• Light-Emitting Diodes
• Optical Communication
• Optics
• Photonics
• Quantum Wells
• Semiconductors
• laser diode
• quantum dot

FROM A REVIEW OF THE FIRST EDITION
"The technical chapters will be lapped up by semiconductor specialists keen to know more ... the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed."
(NEW SCIENTIST)

• Materials Dept., University of California, Santa Barbara, USA

  Shuji Nakamura

• Dept. of Materials Science and Engineering, University of Florida, Gainesville, USA

  Stephen Pearton

• Eurotechnology Japan Ltd., Shinjuku-ku, Tokyo 160, Japan

  Gerhard Fasol

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