Skip to main content
  • Book
  • © 1992

Hydrogen in Crystalline Semiconductors

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 16)

Buy it now

Buying options

eBook USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

This is a preview of subscription content, log in via an institution to check for access.

Table of contents (12 chapters)

  1. Front Matter

    Pages I-XI
  2. Introduction

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 1-3
  3. Hydrogen Incorporation in Crystalline Semiconductors

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 4-27
  4. Passivation of Deep Levels by Hydrogen

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 28-62
  5. Shallow Impurity Passivation by Atomic Hydrogen

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 63-101
  6. Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 102-136
  7. The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 137-156
  8. Hydrogen, and Semiconductor Surfaces and Surface Layers

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 157-174
  9. Hydrogen-Related Defects in Semiconductors

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 175-199
  10. Diffusion of Hydrogen in Semiconductors

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 200-257
  11. Resonance Studies Pertinent to Hydrogen in Semiconductors

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 258-281
  12. Prevalence of Hydrogen Incorporation and Device Applications

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 282-318
  13. Hydrogen and the Mechanical Properties of Semiconductors

    • Stephen J. Pearton, James W. Corbett, Michael Stavola
    Pages 319-330
  14. Back Matter

    Pages 331-363

Authors and Affiliations

  • AT&T Bell Laboratories, Murray Hill, USA

    Stephen J. Pearton

  • Physics Department, State University of New York at Albany, Albany, USA

    James W. Corbett

  • Physics Department, Lehigh University, Bethlehem, USA

    Michael Stavola

Bibliographic Information

Buy it now

Buying options

eBook USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access