The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

Keywords

Bibliographic Information

Book Title: Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
Authors: Nikolai N. Ledentsov
Series Title: Springer Tracts in Modern Physics
DOI: https://doi.org/10.1007/BFb0109574
Publisher: Springer Berlin, Heidelberg
eBook Packages: Springer Book Archive
Copyright Information: Springer-Verlag Berlin Heidelberg 1999
Hardcover ISBN: 978-3-540-65794-1Published: 02 July 1999
Softcover ISBN: 978-3-642-08507-9Published: 15 December 2010
eBook ISBN: 978-3-540-48955-9Published: 28 September 2007
Series ISSN: 0081-3869
Series E-ISSN: 1615-0430
Edition Number: 1
Number of Pages: VIII, 86
Topics: Surfaces and Interfaces, Thin Films

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Table of contents (6 chapters)

Front Matter

Introduction

Basics of MBE growth

Doping and impurity segregation effects in MBE

Influence of strain in the epitaxial film on surface-phase equilibria

II–VI materials

Conclusion

Back Matter

About this book