Wide Bandgap Semiconductors

1. Front Matter

   Pages I-XXV

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2. Development and Applications of Wide Bandgap Semiconductors

   • Akihiko Yoshikawa, Hiroyuki Matsunami, Yasushi Nanishi

   Pages 1-24

3. Fundamental Properties of Wide Bandgap Semiconductors

   • Sadafumi Yoshida, Toshimichi Ito, Akio Hiraki, Hiroshi Saito, Shizuo Fujita, Yoshihiro Ishitani et al.

   Pages 25-96

4. Photonic Devices

   • Yoichi Kawakami, Satoshi Kamiyama, Gen-Ichi Hatakoshi, Takashi Mukai, Yukio Narukawa, Ichirou Nomura et al.

   Pages 97-230

5. Electronic Devices

   • Hironobu Miyamoto, Manabu Arai, Hiroshi Kawarada, Naoharu Fujimori, Sadafumi Yoshida, Takashi Shinohe et al.

   Pages 231-280

6. Novel Nano-Heterostructure Materials and Related Devices

   • Hidekazu Kumano, Ikuo Suemune, Katsumi Kishino, Shizuo Fujita, Adarsh Sandhu, Nobuo Suzuki et al.

   Pages 281-327

7. Crystal Growth

   • Noboru Ohtani, Takao Nakamura, Hitoshi Sumiya, Fumio Hasegawa, Seiji Sarayama, Takashi Taniguchi et al.

   Pages 329-445

8. Back Matter

   Pages 447-460

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The p–n junction was invented in the ?rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e?orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that “synthesis of high quality GaN crystals would eventually enable p-type doping” and in 1989 he succeeded in fabricating the world’s ?rst GaN p–n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey ‘from the nitride wilderness’ to the ?rst experimental results of blue emission from GaN p–n junctions: Japan’s major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p–n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti?c, industrial and social impli- tions.

• LED
• UV
• crystal
• defects
• development
• electronics
• laser
• laser diode
• material
• optical devices
• optoelectronics
• semiconductor
• tables
• telecommunications
• thin films

• The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Chiba University, Chiba, Japan

  Kiyoshi Takahashi, Akihiko Yoshikawa

• Tokyo Institute of Technology, Tokyo, Japan

  Adarsh Sandhu

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