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  • Book
  • © 2000

Ternary Compounds, Organic Semiconductors

Supplement to Vol. III/7h, i (Print Version) Revised and Updated Edition of Vol. III / 17 h, i (CD-ROM)

Editors:

  1. O. Madelung
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  2. U. Rössler
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  3. M. Schulz
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  • Standard reference book with selected and easily retrievable data from the fields of physics and chemistry collected by acknowledged international scientists working in the field of semiconductors
  • Includes supplementary material: sn.pub/extras

Part of the book series: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series (LANDOLT 3, volume 41E)

Part of the book sub series: Condensed Matter (LANDOLT 3)

Sections

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Table of contents (1395 chapters)

  1. General Introduction

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-47

  2. List of frequently used symbols and abbreviations, conversion factors

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-10

  3. I2-II-IV-VI4 compounds crystal structure, lattice parameters

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-3

  4. I2-II-IV-VI4 compounds energy gaps and resistivities

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-2

  5. BaCu4S3 physical properties

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-2

  6. I-III-IV-Se4 compounds crystal structure, energy gaps

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-2

  7. Silver gallium selenide (AgGaSe2) crystal structure, lattice parameters, thermal expasion, melting point

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-3

  8. Silver gallium selenide (AgGaSe2) energy gaps

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-7

  9. Silver gallium selenide (AgGaSe2) intraband and interband energies

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-3

  10. Silver gallium selenide (AgGaSe2) impurities and defects

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-4

  11. Silver gallium selenide (AgGaSe2) phonon wavenumbers, elastic moduli

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-10

  12. Silver gallium selenide (AgGaSe2) transport properties

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-5

  13. Silver gallium selenide (AgGaSe2) optical properties, refractive indices

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-13

  14. Silver gallium selenide (AgGaSe2) dielectric constants

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-2

  15. Silver gallium telluride (AgGaTe2) crystal structure, lattice parameters, physical properties

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-7

  17. Silver indium sulfide (AgInS2) electronic properties: chalcopyrite structure

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-2

  18. Silver indium sulfide (AgInS2) impurities and defects

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-2

  19. Silver indium sulfide (AgInS2) electronic properties: orthorhombic structure

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-2

  20. Silver indium sulfide (AgInS2) transport and optical properties

    • Collaboration: Authors and editors of the volumes III/17H-17I-41E
    Pages 1-6
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About this book

Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and II-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of seven subvolumes covers only the supplementary data to volumes III/17 and 22. Enclosed to each subvolumes, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in user friendly documents, containing data, figures and references. Easy access to the documents is provided via substance and property keywords, listings and full text retrieval.
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