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Lattice Properties

Supplement to Vols. III/17a, 22a (Print Version). Revised and Updated Edition of Vols. III/17a, 22a (CD-ROM)

  • Book
  • © 2001

Overview

Editors:
  1. O. Madelung
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  2. U. Rössler
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  3. M. Schulz
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  • Standard reference book with selected and easily retrievable data from the fields of physics and chemistry collected by acknowledged international scientists
  • Includes supplementary material: sn.pub/extras

Part of the book series: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series (LANDOLT 3, volume 41A1a)

Part of the book sub series: Condensed Matter (LANDOLT 3)

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Table of contents (270 chapters)

  1. General Introduction

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-47

  2. List of frequently used symbols and abbreviations, conversion factors

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-7

  3. Boron nitride (BN) structure

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-3

  4. Boron nitride (BN) phase diagram, equation of state

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-8

  5. Boron nitride (BN) phase transition data

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-3

  6. Boron nitride (BN) lattice parameters

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-12

  7. Boron nitride (BN) linear thermal expansion, temperature dependence of lattice parameters

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-6

  8. Boron nitride (BN) phonon dispersion curves and density of states

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-10

  9. Boron nitride (BN) phonon wavenumbers and frequencies

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-16

  10. Boron nitride (BN) Grüneisen parameters, phonon line width, mean square displacements

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-8

  11. Boron nitride (BN) heat capacity, shock wave velocities

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  12. Boron nitride (BN) elastic moduli

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-5

  13. Boron nitride (BN) bulk modulus

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-5

  14. Boron nitride (BN) Young’s modulus, internal strain

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  15. Boron nitride (BN) effective charges

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  16. Boron nitride (BN) dielectric constants

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-5

  17. Boron nitride (BN) piezoelectric parameters, third order susceptibility

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-2

  18. Boron phosphide (BP) structure, equation of state, specific heat, phase transitions

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  19. Boron phosphide (BP) lattice parameters

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4

  20. Boron phosphide (BP) linear thermal expansion coefficient

    • Collaboration: Authors and editors of the volumes III/17A-22A-41A1a
    Pages 1-4
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Keywords

About this book

Volumes III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview of semiconductor data, all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Each subvolume includes a CD-ROM containing a complete, revised and updated edition of all relevant data. For each individual substance the information is presented in user-friendly documents containing data, figures and references. Easy access to the documents is provided via substance and property keywords, listings and full text retrieval.

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