Skip to main content

High Dielectric Constant Materials

VLSI MOSFET Applications

  • Book
  • © 2005

Overview

  • High-dielectric-constant materials have a huge potential for applications in microelectronic devices.
  • This book provides the most comprehensive survey on their properties, processing and applications
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Advanced Microelectronics (MICROELECTR., volume 16)

This is a preview of subscription content, log in via an institution to check access.

Access this book

eBook USD 259.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 329.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 329.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (21 chapters)

  1. Classical Regime for SiO2

  2. Future Directions for Ultimate Scaling Technology Generations

Keywords

About this book

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Editors and Affiliations

  • International SEMATECH, Austin, USA

    H.R. Huff

  • Motorola, Austin, USA

    D.C. Gilmer

Bibliographic Information

Publish with us