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Defect Complexes in Semiconductor Structures

Proceedings of the International School Held in Mátrafüred, Hungary, September 13 – 17, 1982

  • Conference proceedings
  • © 1983

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Editors:
  1. J. Giber
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  2. F. Beleznay
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  3. I. C. Szép
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  4. J. László
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Part of the book series: Lecture Notes in Physics (LNP, volume 175)

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Table of contents (29 papers)

  1. Front Matter

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  2. A technologist's view on defects

    • Iván C. Szép
    Pages 1-7

  3. Characterization of impurities and defects by electron paramagnetic resonance and related techniques

    • James W. Corbett, Richard L. Kleinhenz, You Zhi-put
    Pages 11-49

  4. Review of the possibilities of electron microscopy in the identification of defect structures

    • J. Heydenreich
    Pages 50-58

  5. Electrical and optical measuring techniques for flaw states

    • J. S. Blakemore
    Pages 59-72

  6. Theory of defect complexes

    • Sokrates T. Pantelides
    Pages 75-84

  7. Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds

    • F. Beleznay
    Pages 85-91

  8. Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results

    • P. Deák, J. Giber
    Pages 92-101

  9. A new model for the Si-A center

    • J. R. Leite, M. J. Caldas, A. Fazzio
    Pages 102-107

  10. Defect complexing in iron-doped silicon

    • C. A. J. Ammerlaan
    Pages 111-119

  11. Photoluminescence of defect complexes in silicon

    • R. Sauer, J. Weber
    Pages 120-133

  12. Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon

    • H. Bender, J. Van Landuyt, S. Amelinckx, C. Claeys, G. Declerck, R. Van Overstraeten
    Pages 134-139

  13. Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon

    • F. -G. Kirscht, P. Gaworzewski, K. Schmalz, I. Babanskaja, P. Zaumseil, U. Winter
    Pages 140-147

  14. Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c

    • F. Spiegelberg, D. Wruck, P. Gaworzewski, K. Schmalz
    Pages 148-153

  15. On the field dependence of capture and emission processes at deep centres

    • H. Klose, K. Irmscher, K. Maass
    Pages 154-159

  16. Lattice matched heterolayers

    • E. Lendvay
    Pages 163-179

  17. Compositional transition layers in heterostructure

    • Jun-ichi Nishizawa, Masayoshi Koike
    Pages 180-188

  18. Defect complexes in III–V compounds

    • Lars-Åke Ledebo
    Pages 189-197

  19. Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs

    • M. Kamińska, J. Lagowski, J. M. Parsey, H. C. Gatos
    Pages 198-202

  20. Main electron traps in gaas: Aggregates of antisite defects

    • T. Wosiński, A. Morawski, T. Figielski
    Pages 203-205
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Keywords

Bibliographic Information

  • Book Title: Defect Complexes in Semiconductor Structures

  • Book Subtitle: Proceedings of the International School Held in Mátrafüred, Hungary, September 13 – 17, 1982

  • Editors: J. Giber, F. Beleznay, I. C. Szép, J. László

  • Series Title: Lecture Notes in Physics

  • DOI: https://doi.org/10.1007/3-540-11986-8

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag Berlin Heidelberg 1983

  • Softcover ISBN: 978-3-540-11986-9Published: 01 February 1983

  • eBook ISBN: 978-3-540-39456-3Published: 29 June 2005

  • Series ISSN: 0075-8450

  • Series E-ISSN: 1616-6361

  • Edition Number: 1

  • Number of Pages: VI, 311

  • Number of Illustrations: 81 b/w illustrations

  • Topics: Condensed Matter Physics

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