Overview
- Provides a comprehensive overview of the technology for charge-trapping non-volatile memories
- Details new architectures and current modeling concepts for non-volatile memory devices
- Focuses on conduction through multi-layer gate dielectrics stacks
- Includes supplementary material: sn.pub/extras
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Table of contents (5 chapters)
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Front Matter
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Back Matter
Keywords
About this book
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
- Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
- Details new architectures and current modeling concepts for non-volatile memory devices;
- Focuses on conduction through multi-layer gate dielectrics stacks.
Editors and Affiliations
About the editor
Bibliographic Information
Book Title: Charge-Trapping Non-Volatile Memories
Book Subtitle: Volume 2--Emerging Materials and Structures
Editors: Panagiotis Dimitrakis
DOI: https://doi.org/10.1007/978-3-319-48705-2
Publisher: Springer Cham
eBook Packages: Chemistry and Materials Science, Chemistry and Material Science (R0)
Copyright Information: Springer International Publishing AG 2017
Hardcover ISBN: 978-3-319-48703-8Published: 22 February 2017
Softcover ISBN: 978-3-319-83999-8Published: 13 July 2018
eBook ISBN: 978-3-319-48705-2Published: 14 February 2017
Edition Number: 1
Number of Pages: V, 211
Number of Illustrations: 53 b/w illustrations, 117 illustrations in colour
Topics: Nanotechnology, Electronic Circuits and Devices, Electronics and Microelectronics, Instrumentation, Memory Structures, Materials Engineering