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Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces

  • Book
  • © 2017

Overview

Authors:
  1. Raphael Schlesinger

    1. Institut für Physik, Humboldt-Universität zu Berlin , Berlin, Germany

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  • Nominated as an outstanding PhD thesis by the Humboldt-Universität zu Berlin, Germany
  • Demonstrates a method to achieve almost arbitrary adjustability of ZnO-organic energy-level alignment, paving the way for versatile device engineering
  • Identifies the fundamental processes governing ZnO-organic energy-level alignment
  • Presents pioneering high-sensitivity, ultralow-background investigation of ZnO gap-state density of states
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Theses (Springer Theses)

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Table of contents (6 chapters)

  1. Front Matter

    Pages i-xviii
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  2. Introduction

    • Raphael Schlesinger
    Pages 1-6

  3. Fundamentals

    • Raphael Schlesinger
    Pages 7-45

  4. Theory of Experimental Methods

    • Raphael Schlesinger
    Pages 47-76

  5. Methodology and Experimental Setups

    • Raphael Schlesinger
    Pages 77-90

  6. Results and Discussion

    • Raphael Schlesinger
    Pages 91-180

  7. Conclusion

    • Raphael Schlesinger
    Pages 181-184

  8. Back Matter

    Pages 185-211
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Keywords

About this book

This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
 

Authors and Affiliations

  • Institut für Physik, Humboldt-Universität zu Berlin , Berlin, Germany

    Raphael Schlesinger

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