Overview
- Details how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles
- Explains how charge transfer can lead to resistive switches
- Demonstrates how conductive filaments are formed and cause resistive switches
- Describe how devices with resistive switches can be used as memory devices
- Provides a comprehensive overview of nanoparticles, donor-acceptor materials, oxides, one- and two-dimensional nanomaterials for the fabrication and characterization of memory devices and mechanisms for resistive switches
Part of the book series: SpringerBriefs in Materials (BRIEFSMATERIALS)
Access this book
Tax calculation will be finalised at checkout
Other ways to access
Table of contents (6 chapters)
Keywords
About this book
Authors and Affiliations
About the author
Bibliographic Information
Book Title: Emerging Resistive Switching Memories
Authors: Jianyong Ouyang
Series Title: SpringerBriefs in Materials
DOI: https://doi.org/10.1007/978-3-319-31572-0
Publisher: Springer Cham
eBook Packages: Chemistry and Materials Science, Chemistry and Material Science (R0)
Copyright Information: The Author(s) 2016
Softcover ISBN: 978-3-319-31570-6Published: 11 July 2016
eBook ISBN: 978-3-319-31572-0Published: 04 July 2016
Series ISSN: 2192-1091
Series E-ISSN: 2192-1105
Edition Number: 1
Number of Pages: VIII, 93
Number of Illustrations: 32 b/w illustrations, 41 illustrations in colour
Topics: Nanotechnology, Electronic Circuits and Devices, Electronics and Microelectronics, Instrumentation, Memory Structures