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Emerging Resistive Switching Memories

  • Book
  • © 2016

Overview

  • Details how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles
  • Explains how charge transfer can lead to resistive switches
  • Demonstrates how conductive filaments are formed and cause resistive switches
  • Describe how devices with resistive switches can be used as memory devices
  • Provides a comprehensive overview of nanoparticles, donor-acceptor materials, oxides, one- and two-dimensional nanomaterials for the fabrication and characterization of memory devices and mechanisms for resistive switches

Part of the book series: SpringerBriefs in Materials (BRIEFSMATERIALS)

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Table of contents (6 chapters)

Keywords

About this book

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

Authors and Affiliations

  • Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore

    Jianyong Ouyang

About the author

Jianyong Ouyang is an Associate Professor in the Department of Materials Science and Engineering at National University of Singapore.

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