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Einstein's Photoemission

Emission from Heavily-Doped Quantized Structures

  • Book
  • © 2015

Overview

Authors:
  1. Kamakhya Prasad Ghatak

    1. Electronics & Communication Engineering, National Institute of Technology, Agartala, India

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  • Thorough discussion of the importance of measurement of band gap in optoelectronic materials
  • Features100 open research problems which form the integral part of the text
  • Covers a wide range of different technologically important electronic compounds in detail
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Tracts in Modern Physics (STMP, volume 262)

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Table of contents (14 chapters)

  1. Front Matter

    Pages i-xxxviii
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  2. Influence of Quantum Confinement on the EP from Non-Parabolic Semiconductors

    1. Front Matter

      Pages 1-1
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    2. The EP from Quantum Wells (QWs) of Heavily Doped (HD) Non-parabolic Semiconductors

      • Kamakhya Prasad Ghatak
      Pages 3-137

    3. The EP from Nano Wires (NWs) of Heavily Doped (HD) Non-parabolic Semiconductors

      • Kamakhya Prasad Ghatak
      Pages 139-192

    4. The EP from Quantum Box of Heavily Doped (HD) Non-parabolic Semiconductors

      • Kamakhya Prasad Ghatak
      Pages 193-239

    5. The EP from Heavily Doped (HD) Quantized Superlattices

      • Kamakhya Prasad Ghatak
      Pages 241-291

  3. The EP from HD III-V Semiconductors and Their Quantized Counter Parts

    1. Front Matter

      Pages 293-293
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    2. The EP from HD Kane Type Semiconductors

      • Kamakhya Prasad Ghatak
      Pages 295-316

    3. The EP from HD Kane Type Materials Under Magnetic Quantization

      • Kamakhya Prasad Ghatak
      Pages 317-326

    4. The EP from QWs, NWs and QBs of HD Optoelectronic Materials

      • Kamakhya Prasad Ghatak
      Pages 327-350

    5. The EP from HD Effective Mass Super Lattices of Optoelectronic Materials

      • Kamakhya Prasad Ghatak
      Pages 351-369

    6. Few Related Applications and Brief Review of Experimental Results

      • Kamakhya Prasad Ghatak
      Pages 371-396

    7. Conclusion and Future Research

      • Kamakhya Prasad Ghatak
      Pages 397-401

    8. Appendix A: The EP from HDS Under Magnetic Quantization

      • Kamakhya Prasad Ghatak
      Pages 403-440

    9. Appendix B: The EP from Super-Lattices of HD Semiconductors Under Magnetic Quantization

      • Kamakhya Prasad Ghatak
      Pages 441-448

    10. Appendix C: The EP from HDS and Their Nano-structures Under Cross-Fields Configuration

      • Kamakhya Prasad Ghatak
      Pages 449-465

    11. Appendix D: The EP from HD III-V, Ternary and Quaternary Semiconductors Under Strong Electric Field

      • Kamakhya Prasad Ghatak
      Pages 467-486

  4. Back Matter

    Pages 487-495
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Keywords

About this book

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.

Authors and Affiliations

  • Electronics & Communication Engineering, National Institute of Technology, Agartala, India

    Kamakhya Prasad Ghatak

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