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GaP Heteroepitaxy on Si(100)

Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients

  • Book
  • © 2013

Overview

Authors:
  1. Henning Döscher

    1. FG Photovoltaik, TU Ilmenau Institut f. Physik, Ilmenau, Germany

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  • Winner of a 2012 German Physical Society Dissertation Award
  • An important contribution to improving optoelectronic devices and performance of photovoltaic materials
  • Interesting for all experimentalists working on the integration of III-V semiconductors and silicon

Part of the book series: Springer Theses (Springer Theses)

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Table of contents (6 chapters)

  1. Front Matter

    Pages i-xiv
    Download chapter PDF

  2. Introduction

    • Henning Döscher
    Pages 1-5

  3. Experimental

    • Henning Döscher
    Pages 7-15

  4. Si(100) Surfaces in Chemical Vapor Environments

    • Henning Döscher
    Pages 17-65

  5. GaP(100) and InP(100) Surfaces

    • Henning Döscher
    Pages 67-90

  6. GaP Growth on Si(100) and Anti-phase Disorder

    • Henning Döscher
    Pages 91-140

  7. Conclusion

    • Henning Döscher
    Pages 141-143
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Keywords

About this book

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

Authors and Affiliations

  • FG Photovoltaik, TU Ilmenau Institut f. Physik, Ilmenau, Germany

    Henning Döscher

About the author

Dr. Henning Döscher
TU Ilmenau
Institut für Physik, FG Photovoltaik
Ehrenbergstr. 29
98693 Ilmenau

Bibliographic Information

  • Book Title: GaP Heteroepitaxy on Si(100)

  • Book Subtitle: Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients

  • Authors: Henning Döscher

  • Series Title: Springer Theses

  • DOI: https://doi.org/10.1007/978-3-319-02880-4

  • Publisher: Springer Cham

  • eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)

  • Copyright Information: Springer International Publishing Switzerland 2013

  • Hardcover ISBN: 978-3-319-02879-8Published: 11 December 2013

  • Softcover ISBN: 978-3-319-37955-5Published: 03 September 2016

  • eBook ISBN: 978-3-319-02880-4Published: 29 November 2013

  • Series ISSN: 2190-5053

  • Series E-ISSN: 2190-5061

  • Edition Number: 1

  • Number of Pages: XIV, 143

  • Number of Illustrations: 47 b/w illustrations, 33 illustrations in colour

  • Topics: Semiconductors, Optics, Lasers, Photonics, Optical Devices, Optical and Electronic Materials

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