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Debye Screening Length

Effects of Nanostructured Materials

  • Book
  • © 2014

Overview

Authors:
  1. Kamakhya Prasad Ghatak

    1. Department of Electronic Science, University of Calcutta, Kolkata, India

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  2. Sitangshu Bhattacharya

    1. Centre for Electronics Design Technology Nanoscale Device Research Laboratory, Indian Institute of Science, Bangalore, India

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    You can also search for this author in PubMed   Google Scholar

  • Discusses the importance of measurement of band gap in optoelectronic materials under intense in built electric field in nano devices and strong external photo excitation
  • Gives information on measuring photon-induced physical properties
  • Contains 150 open research problems which are useful for both PhD students and researchers
  • Is written for advanced graduate students, professionals, researchers and engineers in the fields of solid state sciences, material science, nanoscience and technology
  • Covers a wide range of different technologically important electronic compounds in detail
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Tracts in Modern Physics (STMP, volume 255)

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Table of contents (15 chapters)

  1. Front Matter

    Pages i-xxxiii
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  2. Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors

    1. Front Matter

      Pages 1-1
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    2. The DSL in Quantum Wells of Non-Parabolic Semiconductors

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 3-61

    3. The DSL in NIPI Structures of Non-Parabolic Semiconductors

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 63-75

    4. The DSL in Inversion Layers of Non-Parabolic Semiconductors

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 77-106

  3. Influence of Light Waves on the DSL in Opto-Electronic Semiconductors

    1. Front Matter

      Pages 107-107
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    2. The DSL for III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 109-131

    3. The DSL for Ultra-Thin Films of III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 133-149

    4. The Opto-DSL in III–V, Ternary and Quaternary Semiconductors Under Magnetic Quantization

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 151-162

    5. The Opto-DSL of III–V, Ternary and Quaternary Semiconductors Under Cross-Fields Configuration

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 163-176

  4. Influence of Intense Electric Field on the DSL in Opto-Electronic Semiconductors

    1. Front Matter

      Pages 177-177
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    2. The DSL for III–V, Ternary and Quaternary Semiconductors Intense Electric Field

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 179-211

    3. Suggestion for Experimental Determinations of 2D and 3D DSLs and Few Related Applications

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 213-250

    4. Conclusion and Scope for Future Research

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 251-254

  5. Appendices

    1. Front Matter

      Pages 255-255
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    2. DSL in Bulk Specimens of Non-Parabolic Materials

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 257-270

    3. DSL in Non-Parabolic Semiconductors Under Magnetic Quantization

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 271-298

    4. DSL in Compound Semiconductors and Their Nano-Structures Under Cross-Fields Configuration

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 299-320

    5. DSL in Heavily Doped Compound Semiconductors

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 321-341

    6. DSL in Super-Lattices of Heavily Doped Non-Parabolic Semiconductors Under Magnetic Quantization

      • Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 343-375
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Keywords

About this book

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Authors and Affiliations

  • Department of Electronic Science, University of Calcutta, Kolkata, India

    Kamakhya Prasad Ghatak

  • Centre for Electronics Design Technology Nanoscale Device Research Laboratory, Indian Institute of Science, Bangalore, India

    Sitangshu Bhattacharya

About the authors

Prof. Dr. Eng. Kamakhya Prasad Ghatak is the first recipient of the degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955. He is the principal co-author of more than 250 scientific research papers in international peer reviewed journals and the said five research monographs. He is the invited speaker of SPIE, MRS etc. and is the supervisor of more than two dozens of PhD candidates. His teaching interests are non-linear circuit theory, electron transport and nonlinear mechanics. His present research interests are nano science and technology besides number theory.

Dr. Sitangshu Bhattacharya obtained his M.Sc. and PhD degrees in 2003 and 2009 respectively. He is the co-author of more than 50 scientific research papers in electro-thermal transport phenomena in semiconductor nanostructures in international peer reviewed journals and five research monographs among them, three from Springer series in Materials Science (Vols. 116,137 and 167), one from Springer Series in Nanostructure Science and Technology and one from Springer series in Solid-State Sciences (Vol. 170) respectively. His present research interest is in electro-thermal management in quantum effect devices and interconnects.

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