Simulation of Semiconductor Processes and Devices 2007

1. Front Matter

   Pages i-xv

   PDF

2. Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation

   • Mark R. Pinto

   Pages 1-8

3. Atomistic Modeling of Defect Diffusion in SiGe

   • P. Castrillo, R. Pinacho, J. E. Rubio, L. M. Vega, M. Jaraiz

   Pages 9-12

4. Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches

   • A. Martinez-Limia, C. Steen, P. Pichler, N. Gupta, W. Windl, S. Paul et al.

   Pages 13-16

5. Molecular Dynamics Modeling of Octadecaborane Implantation into Si

   • Luis A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy

   Pages 17-20

6. High Performance, Strained-Ge, Heterostructure p-MOSFETs

   • Tejas Krishnamohan, Donghyun Kim, Christoph Jungemann, Anh-Tuan Pham, Bernd Meinerzhagen, Yoshio Nishi et al.

   Pages 21-24

7. Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations

   • Hiroshi Takeda, Takeo Ikezawa, Michihito Kawada, Masami Hane

   Pages 25-28

8. Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs

   • E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi et al.

   Pages 29-32

9. Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants

   • L. P. Huang, K. C. Ku, Y. M. Sheu, C. F. Nieh, C. H. Chen, H. Chang et al.

   Pages 33-36

10. Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth

    • H. Ceric, A. Nentchev, E. Langer, S. Selberherr

    Pages 37-40

11. Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias

    • Chaffra A. Awo-Affouda, Max O. Bloomfield, Timothy S. Cale

    Pages 41-44

12. Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology

    • Byungjoon Hwang, Yero Lee, Jeong-Guk Min, Hwakyung Shin, Namsu Lim, Sungjin Kim et al.

    Pages 45-48

13. Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)

    • Jinyu Zhang, Wei Xiong, Min-Chun Tsai, Yan Wang, Zhiping Yu

    Pages 49-52

14. Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment

    • Andreas Hössinger, Zoran Djurić, Artem Babayan

    Pages 53-56

15. Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs

    • C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna et al.

    Pages 57-60

16. Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs

    • Seonghoon Jin, Massimo V. Fischetti, Ting-wei Tang

    Pages 61-64

17. Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs

    • M. -A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen

    Pages 65-68

18. Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems

    • C. Jungemann

    Pages 69-72

19. Energy Conservation in Collisional Broadening

    • Z. Aksamija, U. Ravaioli

    Pages 73-76

20. A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells

    • Jongchol Kim, Chia-Yu Chen, Robert W. Dutton

    Pages 77-80

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

• Performance
• VLSI
• algorithm
• algorithms
• modeling
• numerical methods
• optoelectronics
• simulation
• verification
• visualization

• Institut für Mikroelektronik, Technische Universität Wien, Vienna, Austria

  Tibor Grasser, Siegfried Selberherr

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