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Emerging Non-Volatile Memories

  • Book
  • © 2014

Overview

Editors:
  1. Seungbum Hong

    1. Materials Science Division, Argonne National Laboratory, Lemont, USA

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    You can also search for this editor in PubMed   Google Scholar

  2. Orlando Auciello

    1. Materials Science & Engg Dept. and Bioengineering Dept., University of Texas-Dallas, Dallas, USA

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    You can also search for this editor in PubMed   Google Scholar

  3. Dirk Wouters

    1. CMOS Technology Division, IMEC, Leuven, Belgium

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    You can also search for this editor in PubMed   Google Scholar

  • Provides an overview of non-volatile memory fundamentals
  • Covers key memory technologies
  • Written by experts from both academia and industry

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-xii
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  2. Ferroic Memories

    1. Front Matter

      Pages 1-1
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    2. Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories

      • Orlando Auciello, Carlos A. Paz de Araujo, Jolanta Celinska
      Pages 3-35

    3. Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

      • B. Dieny, R. Sousa, G. Prenat, L. Prejbeanu, O. Redon
      Pages 37-101

    4. Emerging Multiferroic Memories

      • Lane W. Martin, Ying-Hao Chu, R. Ramesh
      Pages 103-166

  3. Resistance and Phase Change Memories

    1. Front Matter

      Pages 167-167
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    2. Phase-Change Materials for Data Storage Applications

      • Dominic Lencer, Martin Salinga, Matthias Wuttig
      Pages 169-193

    3. Emerging Oxide Resistance Change Memories

      • Myoung-Jae Lee
      Pages 195-218

    4. Oxide Based Memristive Nanodevices

      • J. Joshua Yang, Gilberto Medeiros-Ribeiro
      Pages 219-256

  4. Probe Memories

    1. Front Matter

      Pages 257-257
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    2. Ferroelectric Probe Storage Devices

      • Seungbum Hong, Yunseok Kim
      Pages 259-273
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Keywords

About this book

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.

This book also:

Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.

Provides an overview of non-volatile memory fundamentals.

Broadens readers’ understanding of future trends in non-volatile memories.

Editors and Affiliations

  • Materials Science Division, Argonne National Laboratory, Lemont, USA

    Seungbum Hong

  • Materials Science & Engg Dept. and Bioengineering Dept., University of Texas-Dallas, Dallas, USA

    Orlando Auciello

  • CMOS Technology Division, IMEC, Leuven, Belgium

    Dirk Wouters

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