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Tetrahedrally-Bonded Amorphous Semiconductors

  • Book
  • © 1985

Overview

Editors:
  1. David Adler

    1. Massachusetts Institute of Technology, Cambridge, USA

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  2. Hellmut Fritzsche

    1. University of Chicago, Chicago, USA

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Part of the book series: Institute for Amorphous Studies Series (IASS)

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Table of contents (44 chapters)

  1. Front Matter

    Pages i-xvi
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  2. Growth and Structure

    1. Glow Discharge Deposition of Amorphous Semiconductors: The Early Years

      • R. C. Chittick, H. F. Sterling
      Pages 1-10

    2. Medium Range Order and Micro Structure of a-Si:H, New Trends

      • A. Chenevas-Paule, R. Bellissent
      Pages 11-26

    3. A Detective Story “Shock Crystallization of Sputtered Amorphous Germanium Films”

      • Makoto Kikuchi
      Pages 27-36

    4. Ordering in Amorphous Germanium

      • M. A. Paesler, D. E. Sayers
      Pages 37-50

    5. Bonding in Distorted Tetrahedra by S-P-D Hybrid Bonds

      • R. Grigorovici, P. Gartner
      Pages 51-62

    6. Spectroscopic Ellipsometry Studies of the Growth and Microstructure of Hydrogenated Amorphous Silicon

      • R. W. Collins, A. H. Clark, C.-Y. Huang
      Pages 63-77

    7. The Influence of Disorder on the Properties of Hydrogenated Amorphous Silicon and Related Alloys

      • B. Von Roedern, A. Madan
      Pages 79-91

    8. Growth and Crystallization Mechanism of Microcrystalline Silicon Films Produced by Reactive RF Sputtering

      • T. D. Moustakas
      Pages 93-105

  3. Hydrogen Incorporation, Impurities, and Defects

    1. Structure and H Bonding in Device Quality a-Si:H

      • P. John, J. I. B. Wilson
      Pages 107-115

    2. Hydrogen Neutralization of Defects in Silicon

      • J. I. Pankove
      Pages 117-128

    3. Hydrogen Incorporation in Amorphous Silicon and Processes of Its Release

      • W. Beyer
      Pages 129-146

    4. Defect Passivation and Photoconduction in Sputtered a-Ge:H

      • P. D. Persans, A. F. Ruppert, C. B. Roxlo
      Pages 147-156

    5. Ion Implanted Hydrogenated Amorphous Silicon

      • Milena Zázvětová, Irena P. Akimchenko
      Pages 157-164

    6. The Role of Impurities in Hydrogenated Amorphous Silicon

      • David E. Carlson
      Pages 165-175

    7. Bonding in Amorphous Semiconductors; Beyond the 8-N Rule

      • John Robertson
      Pages 177-186

    8. Weak Bonds in Amorphous Semiconductors

      • Tatsuo Shimizu, Nobuhiko Ishii, Minoru Kumeda
      Pages 187-195

    9. Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method

      • S. Y. Lin, G. Lucovsky
      Pages 197-211

    10. Study of Disorder in Flash-Evaporated Amorphous InP Films

      • Adriana Gheorghiu, Marie-Luce Thèye
      Pages 213-220

    11. Gap States in Hydrogenated Amorphous Silicon: The Trapped Hole Centres (The a Centres)

      • K. Morigaki, H. Takenaka, I. Hirabayashi, M. Yoshida
      Pages 221-232
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Keywords

Editors and Affiliations

  • Massachusetts Institute of Technology, Cambridge, USA

    David Adler

  • University of Chicago, Chicago, USA

    Hellmut Fritzsche

Bibliographic Information

  • Book Title: Tetrahedrally-Bonded Amorphous Semiconductors

  • Editors: David Adler, Hellmut Fritzsche

  • Series Title: Institute for Amorphous Studies Series

  • DOI: https://doi.org/10.1007/978-1-4899-5361-2

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 1985

  • Hardcover ISBN: 978-0-306-42076-4Due: 01 August 1985

  • Softcover ISBN: 978-1-4899-5363-6Published: 27 November 2013

  • eBook ISBN: 978-1-4899-5361-2Published: 19 December 2013

  • Edition Number: 1

  • Number of Pages: XVI, 564

  • Number of Illustrations: 80 b/w illustrations

  • Topics: Characterization and Evaluation of Materials

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