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  • Book
  • © 1985

Tetrahedrally-Bonded Amorphous Semiconductors

Editors:

  1. David Adler

    1. Massachusetts Institute of Technology, Cambridge, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  2. Hellmut Fritzsche

    1. University of Chicago, Chicago, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Institute for Amorphous Studies Series (IASS)

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Table of contents (44 chapters)

  1. Front Matter

    Pages i-xvi
    PDF

  2. Growth and Structure

    2. Medium Range Order and Micro Structure of a-Si:H, New Trends

      • A. Chenevas-Paule, R. Bellissent
      Pages 11-26

    4. Ordering in Amorphous Germanium

      • M. A. Paesler, D. E. Sayers
      Pages 37-50

    5. Bonding in Distorted Tetrahedra by S-P-D Hybrid Bonds

      • R. Grigorovici, P. Gartner
      Pages 51-62

  3. Hydrogen Incorporation, Impurities, and Defects

    1. Structure and H Bonding in Device Quality a-Si:H

      • P. John, J. I. B. Wilson
      Pages 107-115

    2. Hydrogen Neutralization of Defects in Silicon

      • J. I. Pankove
      Pages 117-128

    4. Defect Passivation and Photoconduction in Sputtered a-Ge:H

      • P. D. Persans, A. F. Ruppert, C. B. Roxlo
      Pages 147-156

    5. Ion Implanted Hydrogenated Amorphous Silicon

      • Milena Zázvětová, Irena P. Akimchenko
      Pages 157-164

    8. Weak Bonds in Amorphous Semiconductors

      • Tatsuo Shimizu, Nobuhiko Ishii, Minoru Kumeda
      Pages 187-195

    10. Study of Disorder in Flash-Evaporated Amorphous InP Films

      • Adriana Gheorghiu, Marie-Luce Thèye
      Pages 213-220

    11. Gap States in Hydrogenated Amorphous Silicon: The Trapped Hole Centres (The a Centres)

      • K. Morigaki, H. Takenaka, I. Hirabayashi, M. Yoshida
      Pages 221-232
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Keywords

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Editors and Affiliations

  • Massachusetts Institute of Technology, Cambridge, USA

    David Adler

  • University of Chicago, Chicago, USA

    Hellmut Fritzsche

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Bibliographic Information

  • Book Title: Tetrahedrally-Bonded Amorphous Semiconductors

  • Editors: David Adler, Hellmut Fritzsche

  • Series Title: Institute for Amorphous Studies Series

  • DOI: https://doi.org/10.1007/978-1-4899-5361-2

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 1985

  • Hardcover ISBN: 978-0-306-42076-4Due: 01 August 1985

  • Softcover ISBN: 978-1-4899-5363-6Published: 27 November 2013

  • eBook ISBN: 978-1-4899-5361-2Published: 19 December 2013

  • Edition Number: 1

  • Number of Pages: XVI, 564

  • Number of Illustrations: 80 b/w illustrations

  • Topics: Characterization and Evaluation of Materials

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Buy it now

eBook USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

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