Light Scattering in Semiconductor Structures and Superlattices

1. Front Matter

   Pages i-xii

   PDF

2. Inelastic Light Scattering from Semiconductors

   1. Inelastic Light Scattering from Semiconductors

      • E. Burstein, M. Cardona, D. J. Lockwood, A. Pinczuk, J. F. Young

      Pages 1-18

3. Optic Phonons

   1. Acoustic, Optic and Interface Phonons: Low Symmetry Superlattices

      • Manuel Cardona

      Pages 19-32

   2. Raman Scattering in α-Sn1_xGex Alloys

      • J. Menéndez, K. Sinha, H. Höchst, M. A. Engelhardt

      Pages 33-38

   3. Phonon Spectra of Ultrathin GaAs/AlAs Superlattices

      • E. Molinari, S. Baroni, P. Giannozzi, S. de Gironcoli

      Pages 39-52

   4. Resonant Raman Scattering in GaAs-AlAs Multiquantum Wells Under Magnetic Fields

      • J. M. Calleja, F. Meseguer, F. Calle, C. López, L. Viña, C. Tejedor et al.

      Pages 53-61

   5. Optical Phonons and Raman Spectra in InAs/GaSb Superlattice

      • G. Kanellis, D. Berdekas

      Pages 63-78

   6. Raman Scattering Studies of Optical Phonons in GaAs/AlAs and GaAs/AlxGa1-xAs Superlattices

      • Z. P. Wang, H. X. Han, G. H. Li

      Pages 79-80

   7. Analysis of Raman Spectra of GeSi Ultrathin Superlattices and Epilayers

      • M. W. C. Dharma-wardana, G. C. Aers, D. J. Lockwood, J.-M. Baribeau

      Pages 81-102

   8. Interface Roughness and Confined Vibrations

      • Bernard Jusserand

      Pages 103-121

4. Acoustic Phonons

   1. Interaction of Light with Acoustic Waves in Superlattices and Related Devices

      • J. Sapriel, J. He

      Pages 123-138

   2. Localised and Extended Acoustic Waves in Superlattices Light Scattering by Longitudinal Phonons

      • B. Djafari Rouhani, E. M. Khourdifi

      Pages 139-158

5. Strain Related Effects

   1. Optical Phonon Raman Scattering as a Local Probe of Si-Ge Strained Layers

      • J. C. Tsang, J. L. Freeouf, S. S. Iyer

      Pages 159-172

   2. Strain Characterization of Semiconductor Structures and Superlattices

      • E. Anastassakis

      Pages 173-196

   3. Characterization of Strain and Epitaxial Quality in Si/Ge Heterostructures

      • D. J. Lockwood, J.-M. Baribeau

      Pages 197-217

   4. Raman Scattering Characterization of Strain in (001) and (111) GaSb/AlSb Single Quantum Wells and Superlattices and in Metastable GexSn1-x Alloys

      • G. P. Schwartz

      Pages 219-227

6. Micro Raman/Small Structures/Impurities

   1. The Raman Line Shape of Semiconductor Nanocrystals

      • Philippe M. Fauchet

      Pages 229-245

   2. Raman Scattering of III-V and II-VI Semiconductor Microstructures

      • M. Watt, A. P. Smart, M. A. Foad, C. D. W. Wilkinson, H. E. G. Arnot, C. M. Sotomayor Torres

      Pages 247-255

   3. Towards Two Dimensional Micro-Raman Analysis of Semiconductor Materials and Devices

      • B. Wakefield, W. J. Rothwell

      Pages 257-257

   4. Raman Spectroscopy for Characterization of Layered Semiconductor Materials and Devices

      • Hans Brugger

      Pages 259-274

Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.

• crystal
• electron
• material
• scattering
• semiconductor
• semiconductor physics
• semiconductors
• spectroscopy
• superlattice

• National Research Council, Ottawa, Canada

  David J. Lockwood

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