Overview
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Table of contents(60 chapters)
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Growth Mechanisms of SIO2 Films
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Thermal and Structural Properties of SiO2
About this book
Editors and Affiliations
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Stanford University, Stanford, USA
C. Robert Helms
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Fairchild Research Center, National Semiconductor, Santa Clara, USA
Bruce E. Deal
Bibliographic Information
Book Title: The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Editors: C. Robert Helms, Bruce E. Deal
DOI: https://doi.org/10.1007/978-1-4899-0774-5
Publisher: Springer New York, NY
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eBook Packages: Springer Book Archive
Copyright Information: Springer Science+Business Media New York 1988
Hardcover ISBN: 978-0-306-43032-9Published: 28 February 1989
Softcover ISBN: 978-1-4899-0776-9Published: 30 May 2013
eBook ISBN: 978-1-4899-0774-5Published: 11 November 2013
Edition Number: 1
Number of Pages: XIV, 556
Topics: Electrochemistry, Physical Chemistry, Electrical Engineering, Optical and Electronic Materials