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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

  • Book
  • © 1988

Overview

Editors:
  1. C. Robert Helms

    1. Stanford University, Stanford, USA

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    You can also search for this editor in PubMed   Google Scholar

  2. Bruce E. Deal

    1. Fairchild Research Center, National Semiconductor, Santa Clara, USA

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    You can also search for this editor in PubMed   Google Scholar

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Table of contents (60 chapters)

  1. Front Matter

    Pages i-xiii
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  2. Growth Mechanisms of SIO2 Films

    1. Front Matter

      Pages 1-3
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    2. Historical Perspectives of Silicon Oxidation

      • Bruce E. Deal
      Pages 5-16

    3. Oxidation of Silicon: Tests of Mechanisms

      • Robert H. Doremus
      Pages 17-23

    4. Silicon Oxidation Models Based on Parallel Mechanisms

      • C. R. Helms, J. de Larios
      Pages 25-34

    5. The Role of SiO in Si Oxidation at a Si-SiO2 Interface

      • S. I. Raider
      Pages 35-42

    6. Uncertainty Analysis of Analytic Oxidation Models

      • Zhi-Min Ling, Luc H. Dupas, Kristin M. De Meyer
      Pages 43-51

    7. Modeling of the Oxide Growth in a Chlorine Ambient

      • Zhi-Min Ling, Luc H. Dupas, Kristin M. De Meyer
      Pages 53-59

    8. Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation

      • Eugene A. Irene
      Pages 61-74

    9. Si Oxidation Mechanisms as Studied by Oxygen Tracer Methods

      • S. Rico
      Pages 75-84

    10. The Oxidation of Silicides on Silicon

      • F. M. d’Heurle
      Pages 85-94

    11. Oxidation Kinetics of Si in Dry CO2

      • Tadashi Sakon, J. B. Wagner Jr.
      Pages 95-102

    12. A Novel Silicon Oxidation Method — HF Enhanced Oxidation

      • Long Wei, Xu Yuan-sen, Zheng Yang-shu
      Pages 103-110

    13. Thermal Oxidation of Silicon in an Afterglow Gas

      • Andrew M. Hoff, Jerzy Ruzyllo
      Pages 111-117

    14. Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)

      • D. V. Tsu, S. S. Kim, G. Lucovsky
      Pages 119-127

    15. Anodic SiO2 for Low Temperature Gate Dielectrics

      • Keyvan Sayyah
      Pages 129-136

  3. Thermal and Structural Properties of SiO2

    1. Front Matter

      Pages 137-138
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    2. Local Atomic Structure of Thermally Grown SiO2 Films

      • G. Lucovsky, J. T. Fitch, E. Kobeda, E. A. Irene
      Pages 139-148

    3. Structural Relaxation and Growth of SiO2 Films on Si

      • R. W. Rendell, K. L. Ngai
      Pages 149-157

    4. Structural Relaxation Effects in Dry Thermal Silicon Dioxide Films on Silicon

      • L. M. Landsberger, W. A. Tiller
      Pages 159-167
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Keywords

About this book

The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

Editors and Affiliations

  • Stanford University, Stanford, USA

    C. Robert Helms

  • Fairchild Research Center, National Semiconductor, Santa Clara, USA

    Bruce E. Deal

Bibliographic Information

  • Book Title: The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

  • Editors: C. Robert Helms, Bruce E. Deal

  • DOI: https://doi.org/10.1007/978-1-4899-0774-5

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 1988

  • Hardcover ISBN: 978-0-306-43032-9Published: 28 February 1989

  • Softcover ISBN: 978-1-4899-0776-9Published: 30 May 2013

  • eBook ISBN: 978-1-4899-0774-5Published: 11 November 2013

  • Edition Number: 1

  • Number of Pages: XIV, 556

  • Topics: Electrochemistry, Physical Chemistry, Electrical Engineering, Optical and Electronic Materials

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