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Low-Dimensional Structures in Semiconductors

From Basic Physics to Applications

  • Book
  • © 1991

Overview

Editors:
  1. A. R. Peaker

    1. University of Manchester Institute of Science and Technology, Manchester, UK

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  2. H. G. Grimmeiss

    1. University of Lund, Lund, Sweden

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    You can also search for this editor in PubMed   Google Scholar

Part of the book series: NATO Science Series B: (NSSB, volume 281)

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Table of contents (13 chapters)

  1. Front Matter

    Pages i-viii
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  2. Concepts

    1. The Valence Sub-Bands of Biased Semiconductor Heterostructures

      • R. Ferreira, G. Bastard
      Pages 1-15

    2. Impurities in Semiconductors

      • H. G. Grimmeiss, M. Kleverman, J. Olajos, P. Omling, V. Nagesh
      Pages 17-35

    3. Photoluminescence of 3D and Low Dimensional Systems

      • B. Hamilton
      Pages 37-46

  5. Back Matter

    Pages 221-226
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Keywords

About this book

This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on 'Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.' This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.' The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog­ ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con­ cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The third section covers the crucial issue of interfaces while the final section deals with devices and device physics.

Editors and Affiliations

  • University of Manchester Institute of Science and Technology, Manchester, UK

    A. R. Peaker

  • University of Lund, Lund, Sweden

    H. G. Grimmeiss

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