Overview
- Editors:
-
-
Takahiko Misugi
-
Fujitsu Techno Research Ltd., Kawasaki 211, Japan
-
Akihiro Shibatomi
-
Fujitsu Laboratories Limited, Atsugi, Japan
Access this book
Other ways to access
Table of contents (8 chapters)
-
-
- Takahiko Misugi, Akihiro Shibatomi
Pages 1-8
-
- Shin-ichi Akai, Masamichi Yokogawa
Pages 9-61
-
- Hideaki Kohzu, Tsutomu Noguchi
Pages 63-81
-
- Masahiro Hirayama, Kazuyoshi Asai, Takashi Mizutani
Pages 83-139
-
- Kazuo Kondo, Junji Komeno
Pages 141-169
-
- Masayuki Abe, Takashi Mimura
Pages 171-213
-
-
- Hisao Hayakawa, Seigo Kotani
Pages 255-295
-
Back Matter
Pages 297-306
About this book
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
Editors and Affiliations
-
Fujitsu Techno Research Ltd., Kawasaki 211, Japan
Takahiko Misugi
-
Fujitsu Laboratories Limited, Atsugi, Japan
Akihiro Shibatomi
