Coherent Optical Interactions in Semiconductors

1. Front Matter

   Pages i-ix

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2. Optical Dephasing of Excitons in III-V Semiconductors

   • J. Kuhl, E. J. Mayer, G. Smith, R. Eccleston, D. Bennhardt, P. Thomas et al.

   Pages 1-31

3. Coherent Excitonic and Free Carrier Dynamics in Bulk GaAs and Heterostructures

   • T. Kuhn, E. Binder, F. Rossi, A. Lohner, K. Rick, P. Leisching et al.

   Pages 33-62

4. Many-Body Theory of Coherent Optical Effects in Semiconductors

   • R. Binder, Y. Z. Hu, A. Knorr, M. Lindberg, S. W. Koch

   Pages 63-90

5. Spin-Related Effects in III-V Semiconductors

   • R. T. Harley

   Pages 91-109

6. Quantum Beat Spectroscopy of Excitons in Semiconductors

   • W. von der Osten, V. Langer, H. Stolz

   Pages 111-136

7. Investigation of Free-Carrier Scattering in Semiconductors Using Coherent Spectroscopy

   • Jagdeep Shah, Dai-Sik Kim

   Pages 137-155

8. Nonlinear Coherent Optical Effects in Semiconductors

   • Duncan G. Steel, Hailin Wang, Min Jiang, Kyle Ferrio, Steven Cundiff

   Pages 157-179

9. Non-Markovian Optical Systems

   • Erik T. J. Nibbering, Douwe A. Wiersma, Koos Duppen

   Pages 181-197

10. Ultrashort Coherent Excitations in Semiconductors

    • Walter E. Bron

    Pages 199-222

11. Vertical Transport Studied by Sub-Picosecond Four-Wave Mixing Experiments

    • J. Feldmann, G. von Plessen, T. Meier, P. Thomas, E. O. Göbel, K. W. Goossen et al.

    Pages 223-243

12. Amplitude Decay and Instantaneous Frequency Dynamics of Excitonic Polarization in Semiconductor Quantum Wells

    • J.-Y. Bigot, M.-A. Mycek, S. Weiss, R. G. Ulbrich, D. S. Chemla

    Pages 245-260

13. Dephasing Time Measurements in Quantum Dots by Non-Degenerate Four Wave Mixing

    • A. Uhrig, U. Woggon, M. Portuné, V. Sperling, C. Klingshirn

    Pages 261-265

14. Coherence Effects on the Exciton Radiative Recombination in Quantum Wells

    • B. Deveaud, B. Sermage, D. S. Katzer

    Pages 267-272

15. The Relationship Between Real and Virtual Excitation Mechanisms for Nonlinear Refraction

    • M. G. Burt

    Pages 273-276

16. Resonant Rayleigh Scattering in Epitaxially Grown ZnSe1−xSx Layers

    • M. Jütte, H. Stolz, W. von der Osten, J. Söllner, K.-P. Geyzers, M. Heuken et al.

    Pages 277-281

17. Spectrally-Resolved Femtosecond-Four-Wave Mixing on Semiconductors

    • T. Rappen, U. Peter, W. Schäfer, M. Wegener

    Pages 283-287

18. Quantum Beats and Polarization Interference from Quantum Well Excitons

    • G. von Plessen, M. Koch, J. Feldmann, E. O. Göbel, P. Thomas, J. Shah et al.

    Pages 289-293

19. Nature of Coherent Four-Wave Mixing Beats in Semiconductors

    • J. Erland, I. Balslev, J. M. Hvam

    Pages 295-299

20. Analogies Between Coherent Optical Interactions and Quantum Transport in Semiconductor Devices

    • W. Quade, F. Rossi, E. Schöll

    Pages 301-305

The NATO Advanced Research Workshop on Coherent Optical Processes in Semiconductors was held in Cambridge, England on August 11-14,1993. The idea of holding this Workshop grew from the recent upsurge in activity on coherent transient effects in semiconductors. The development of this field reflects advances in both light sources and the quality of semiconductor structures, such that tunable optical pulses are now routinely available whose duration is shorter than the dephasing time for excitonic states in quantum wells. It was therefore no surprise to the organisers that as the programme developed, there emerged a heavy emphasis on time-resolved four-wave mixing, particularly in quantum wells. Nevertheless, other issues concerned with coherent effects ensured that several papers on related problems contributed some variety. The topics discussed at the workshop centred on what is a rather new field of study, and benefited enormously by having participants representing many of the principal groups working in this area. Several themes emerged through the invited contributions at the Workshop. One important development has been the careful examination of the two-level model of excitonic effects; a model which has been remarkably successful despite the expected complexities arising from the semiconductor band structure. Indeed, modest extensions to the two level model have been able to offer a useful account for some of the complicated polarisation dependence of four-wave mixing signals from GaAs quantum wells. This work clearly is leading to an improved understanding of excitons in confined systems.

• Exciton
• Semiconductor
• Signal
• development
• model
• semiconductors
• spectroscopy

• University of Cambridge, Cambridge, UK

  R. T. Phillips

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