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Nondestructive Evaluation of Semiconductor Materials and Devices

  • Book
  • © 1979

Overview

Editors:
  1. Jay N. Zemel

    1. The University of Pennsylvania, Philadelphia, USA

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Part of the book series: NATO Science Series B: (NSSB, volume 46)

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Table of contents (14 chapters)

  1. Front Matter

    Pages i-xi
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  2. Two-Probe (Spreading Resistance) Measurements for Evaluation of Semiconductor Materials and Devices

    • James R. Ehrstein
    Pages 1-66

  3. Four-Terminal Nondestructive Electrical and Galvanomagnetic Measurements

    • H. H. Weider
    Pages 67-104

  4. Characterization of Surface States at the Si-SiO2 Interface

    • G. DeClerck
    Pages 105-148

  5. Steady-State and Non-Steady-State Characterization of MOS Devices

    • John G. Simmons
    Pages 149-199

  6. Semiconductor Material Evaluation by Means of Schottky Contacts

    • Klaus Heime
    Pages 201-256

  7. Noise

    • A. D’Amico
    Pages 257-314

  8. Optical Characterization of Semiconductors

    • E. D. Palik, R. T. Holm
    Pages 315-395

  9. Use of Photoemission and Related Techniques to Study Device Fabrication

    • W. E. Spicer
    Pages 397-456

  10. Scanned Photovoltage and Photoemission

    • T. H. DiStefano
    Pages 457-514

  11. SEM Methods for the Characterization of Semiconductor Materials and Devices

    • C. J. Varker
    Pages 515-580

  12. Backscattering Spectrometry and Related Analytical Techniques

    • M.-A. Nicolet
    Pages 581-630

  13. The Acoustic Microscope: A Tool for Nondestructive Testing

    • J. Attal
    Pages 631-676

  14. Non-Destructive Tests Used to Insure the Integrity of Semiconductor Devices with Emphasis on Passive Acoustic Techniques

    • George G. Harman
    Pages 677-738

  15. Lifetime Data Analysis

    • F. H. Reynolds
    Pages 739-769

  16. Back Matter

    Pages 771-782
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Keywords

About this book

From September 19-29, a NATO Advanced Study Institute on Non­ destructive Evaluation of Semiconductor Materials and Devices was held at the Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techniques; optical methods; backscatter methods; x-ray observations; accele­ rated life tests. It would be difficult to give a full discussion of such an Institute without going through the major points of each speaker. Clearly this is the proper task of the eventual readers of these Proceedings. Instead, it would be preferable to stress some general issues. What came through very clearly is that the measurements of the basic scientists in materials and device phenomena are of sub­ stantial immediate concern to the device technologies and end users.

Editors and Affiliations

  • The University of Pennsylvania, Philadelphia, USA

    Jay N. Zemel

Bibliographic Information

  • Book Title: Nondestructive Evaluation of Semiconductor Materials and Devices

  • Editors: Jay N. Zemel

  • Series Title: NATO Science Series B:

  • DOI: https://doi.org/10.1007/978-1-4757-1352-7

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 1979

  • Softcover ISBN: 978-1-4757-1354-1Published: 11 September 2013

  • eBook ISBN: 978-1-4757-1352-7Published: 11 November 2013

  • Series ISSN: 0258-1221

  • Edition Number: 1

  • Number of Pages: XI, 782

  • Topics: Electrical Engineering

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