Characterization of Crystal Growth Defects by X-Ray Methods

1. Front Matter

   Pages i-xxvi

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2. Industrial Implications of Crystal Quality

   • Eugene S. Meieran

   Pages 1-27

3. The Technical Importance of Growth Defects

   • A. D. Milne

   Pages 28-45

4. Defects and Their Detectability in Melt-Grown Crystals

   • D. T. J. Hurle, B. Cockayne

   Pages 46-72

5. Defects and Their Detectability

   • J. R. Patel

   Pages 73-96

6. Defect Generation in Metal Crystals

   • G. Champier

   Pages 97-132

7. Defects in Non-Metal Crystals

   • H. Klapper

   Pages 133-160

8. Defect Visualisation: Individual Defects

   • A. R. Lang

   Pages 161-185

9. Experimental Techniques for the Study of Statistically Distributed Defects

   • Jochen R. Schneider

   Pages 186-215

10. Elementary Dynamical Theory

    • Michael Hart

    Pages 216-263

11. Perfect and Imperfect Crystals

    • N. Kato

    Pages 264-297

12. X-ray Sources

    • U. Bonse

    Pages 298-319

13. X-ray Detectors

    • A. R. Lang

    Pages 320-332

14. Sample Preparation

    • D. Keith Bowen

    Pages 333-348

15. Laboratory Techniques for X-ray Reflection Topography

    • R. W. Armstrong

    Pages 349-367

16. Laboratory Techniques for Transmission X-Ray Topography

    • J. Chikawa

    Pages 368-400

17. White Beam Synchrotron Radiation Topography

    • J. Miltat

    Pages 401-420

18. Control of Wavelength, Polarization, Time-Structure and Divergence for Synchrotron Radiation Topography

    • Michael Hart

    Pages 421-432

19. Monochromatic Synchrotron Radiation Topography

    • Michele Sauvage

    Pages 433-455

20. Environmental Stages and Dynamic Experiments

    • B. K. Tanner

    Pages 456-473

This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.

• Aluminium
• X-ray
• crystal
• diffraction
• materials

• Department of Physics, Durham University, Durham, UK

  Brian K. Tanner

• Department of Engineering, Warwick University, Coventry, UK

  D. Keith Bowen

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