Band Structure Engineering in Semiconductor Microstructures

1. Front Matter

   Pages i-xi

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2. Electronic Structure, Band Offsets and Stability

   1. Comments on “Can Band Offsets be Changed Controllably?”

      • Richard M. Martin

      Pages 1-6

   2. The Pressure Dependent Band Offset in a Type II Superlattice, a Test for Band Line-Up Theories

      • L. M. Claessen

      Pages 7-20

   3. Electronic Properties of Semiconductor Interfaces: The Control of Interface Barriers

      • Fernando Flores

      Pages 21-31

   4. Polar/Polar, Covalent/Covalent and Covalent/Polar Semiconductor Superlattices

      • S. Ciraci

      Pages 33-49

   5. Band Offsets at Semiconductor Heterojunctions: Bulk or Interface Properties?

      • Stefano Baroni, Raffaele Resta, Alfonso Baldereschi

      Pages 51-60

   6. The Physics of Hg-Based Heterostructures

      • M. Voos

      Pages 61-80

   7. Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systems

      • Jean-Pierre Faurie

      Pages 81-98

   8. Exact Envelope Function Equations for Microstructures and the Particle in a Box Model

      • M. G. Burt

      Pages 99-109

   9. A Method for Calculating Electronic Structure of Semiconductor Superlattices: Perturbation

      • H. M. Polatoglou, G. Kanellis, G. Theodorou

      Pages 111-117

   10. The Effects of Ordering in Ternary Semiconductor Alloys: Electronic and Structural Properties

       • Kathie E. Newman, Dan Teng, Jun Shen, Bing-Lin Gu

       Pages 119-127

   11. AB-Initio Molecular Dynamics Studies of Microclusters

       • Wanda Andreoni, Giorgio Pastore, Roberto Car, Michele Parrinello, Paolo Giannozzi

       Pages 129-135

3. Transport Properties

   1. Quantum Interference in Semiconductor Devices

      • M. Pepper

      Pages 137-147

   2. A Review of Recent Developments in Resonant Tunnelling

      • L. Eaves, F. W. Sheard, G. A. Toombs

      Pages 149-166

   3. Observation of Ballistic Holes

      • M. Heiblum, K. Seo, H. P. Meier, T. W. Hickmott

      Pages 167-176

   4. Quantum Transport Theory of Resonant Tunneling Devices

      • William R. Frensley

      Pages 177-185

   5. Hot Electron Effects in Microstructures

      • P. Lugli

      Pages 187-200

   6. Models for Scattering and Vertical Transport in Microstructures and Superlattices

      • D. C. Herbert

      Pages 201-215

   7. Electron Beam Source Molecular Beam Epitaxy of AlxGal−xAs Graded Band Gap Device Structures

      • R. J. Malik, A. F. J. Levi, B. F. Levine, R. C. Miller, D. V. Lang, L. C. Hopkins et al.

      Pages 217-223

   8. Future Trends in Quantum Semiconductor Devices

      • M. J. Kelly

      Pages 225-231

This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc­ tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.

• band structure
• electronic structure
• semiconductor

• School of Engineering and Applied Science, University of Durham, Durham, UK

  R. A. Abram

• Department of Theoretical Physics, University of Newcastle upon Tyne, Newcastle upon Tyne, UK

  M. Jaros

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