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  • Book
  • © 1991

Disordered Materials

Science and Technology

Part of the book series: Institute for Amorphous Studies Series (IASS)

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Table of contents (67 chapters)

  1. Front Matter

    Pages i-xiii
  2. Introduction

    1. Introduction

      • David Adler, Brian B. Schwartz, Marvin Silver
      Pages 1-7
  3. Chemistry and Physics of Disordered Materials

    1. Front Matter

      Pages 9-9
    2. Simple Band Model for Amorphous Semiconductor Alloys

      • Morrel H. Cohen, H. Fritzsche, S. R. Ovshinsky
      Pages 14-16
    3. Reversible Conductivity Transformations in Chalcogenide Alloy Films

      • E. J. Evans, J. H. Helbers, S. R. Ovshinsky
      Pages 17-22
    4. Structural Studies of Amorphous Semiconductors

      • A. Bienenstock, F. Betts, S. R. Ovshinsky
      Pages 23-26
    5. Analog Models for Information Storage and Transmission in Physiological Systems

      • Stanford R. Ovshinsky, Iris M. Ovshinsky
      Pages 30-33
    6. Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors

      • J. Feinleib, J. deNeufville, S. C. Moss, S. R. Ovshinsky
      Pages 34-37
    7. Chemical Modification of Amorphous Chalcogenides

      • Stanford R. Ovshinsky
      Pages 48-50
    8. Optical and Electronic Properties of Modified Amorphous Materials

      • R. Flasck, M. Izu, K. Sapru, T. Anderson, S. R. Ovshinsky, H. Fritzsche
      Pages 51-53
    9. A New Amorphous Silicon-Based Alloy for Electronic Applications

      • Stanford R. Ovshinsky, Arun Madan
      Pages 64-65
    10. Threshold Switching in Chalcogenide-Glass Thin Films

      • D. Adler, M. S. Shur, M. Silver, S. R. Ovshinsky
      Pages 66-87
    11. Properties of Amorphous Si:F:H Alloys

      • A. Madan, S. R. Ovshinsky
      Pages 88-93
    12. Electroreflectance and Raman Scattering Investigation of Glow-Discharge Amorphous Si:F:H

      • R. Tsu, M. Izu, S. R. Ovshinsky, F. H. Pollak
      Pages 94-98

About this book

Landmark contributions to science and mechanisms for the origin of the phenomena, and technology are rarely recognized at the time of reached important conclusions about the physical publication. Few people, even in technical areas, nature of the materials at equilibrium and their recogni zed the importance of developments such as electronic nonequilibrium properties. Many of these the transistor, the laser, or electrophotography ideas were condensed into a publication for Physical until well after their successful demonstration. Review Letters, paper 1 in this collection. This So-called experts, in fact, tend to resist new paper immediately attracted attention to the field, inventions, a natural instinct based on a combina­ and directly lead to the initiation of large research tion of fear of obsolescent expertise and jealousy efforts at both industrial laboratories and univer- arising from lack of active participation in the ties throughout the world. Inevitably, there was discovery. the usual amount of controversy, with many experts Denigration of new ideas is a relatively simultaneously taking positions (2) and (3) above. safe modus operandi, since the vast majority It has now been well over 20 years since eventually are abandoned well short of commerciality. the original publication date, and an objective view However, a successful device can be identified by can be taken in hindsight.

Editors and Affiliations

  • Late of Massachusetts Institute of Techology, Cambridge, USA

    David Adler

  • Institute for Amorphous Studies, Bloomfield Hills, USA

    Brian B. Schwartz

  • Brooklyn College of the City University of New York, Brooklyn, USA

    Brian B. Schwartz

  • University of North Carolina, Chapel Hill, USA

    Marvin Silver

Bibliographic Information

Buy it now

Buying options

eBook USD 74.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Other ways to access