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Point and Extended Defects in Semiconductors

  • Book
  • © 1989

Overview

Editors:
  1. G. Benedek

    1. Università degli Studi di Milano, Milan, Italy

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  2. A. Cavallini

    1. Università degli Studi di Bologna, Bologna, Italy

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  3. W. Schröter

    1. University of Göttingen, Göttingen, Federal Republic of Germany

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Part of the book series: NATO Science Series B: (NSSB, volume 202)

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Table of contents (19 chapters)

  1. Front Matter

    Pages i-x
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  2. Basic Properties of Defects and Their Interactions

    1. Structure and Properties of Point Defects in Semiconductors

      • L. C. Kimerling
      Pages 1-14

    2. Conductivity of Grain Boundaries and Dislocations in Semiconductors

      • R. Labusch, J. Hess
      Pages 15-37

    3. Point Defects in GaAs

      • E. R. Weber, K. Khachaturyan, M. Hoinkis, M. Kaminska
      Pages 39-50

    4. Changes of Electrical Properties of Silicon Caused by Plastic Deformation

      • Helmut Alexander
      Pages 51-63

    5. Internal Friction Due to Defects in Semiconductors

      • P. Haasen, U. Jendrich, D. Laszig
      Pages 65-75

    6. Interaction of Impurities with Dislocations in Semiconductors

      • Koji Sumino
      Pages 77-94

    7. Gettering Mechanisms in Silicon

      • W. Schröeter, R. Kuehnapfel
      Pages 95-104

    8. Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon

      • S. Pizzini, F. Borsani, A. Sandrinelli, D. Narducci, F. Allegretti
      Pages 105-121

    9. The Extended Nature of Pointlike Defects in Silicon

      • G. F. Cerofolini
      Pages 123-133

  3. Defect Imaging and Spectroscopy

    1. Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy

      • A. Ourmazd
      Pages 135-151

    2. Interaction between Point-Defects, Dislocations and a Grain Boundary: A HREM Study

      • J. Thibault-Desseaux, J. L. Putaux, H. O. K. Kirchner
      Pages 153-164

    3. The Influence of Residual Contamination on the Structure and Properties of Metal/GaAs Interfaces

      • Zuzanna Liliental-Weber
      Pages 165-178

    4. High-Resolution Electron Microscopy of Twin-Free (111) CdTe Layers Grown on Vicinal (001) GaAs Surfaces

      • G. Feuillet, Y. Gobil, J. Cibert, S. Tatarenko, K. Saminadayar
      Pages 179-182

    5. STM and Related Techniques

      • D. W. Pohl
      Pages 183-200

    6. Tunneling Spectroscopy and III-V Semiconductor Interfaces

      • O. Albrektsen, H. W. M. Salemink
      Pages 201-205

    7. SEM Studies of Individual Defects in Semiconductors

      • D. B. Holt
      Pages 207-223

    8. Quantitative Characterization of Semiconductor Defects by Electron Beam Induced Current

      • C. Donolato
      Pages 225-241

    9. Recombination at Dislocations in Silicon and Gallium Arsenide

      • P. R. Wilshaw, T. S. Fell, G. R. Booker
      Pages 243-256

    10. Imaging of Extended Defects by Quenched Infra-Red Beam Induced Currents (Q-IRBIC)

      • A. Castaldini, A. Cavallini
      Pages 257-268
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Keywords

About this book

The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an­ swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char­ acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in­ creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo­ rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

Editors and Affiliations

  • Università degli Studi di Milano, Milan, Italy

    G. Benedek

  • Università degli Studi di Bologna, Bologna, Italy

    A. Cavallini

  • University of Göttingen, Göttingen, Federal Republic of Germany

    W. Schröter

Bibliographic Information

  • Book Title: Point and Extended Defects in Semiconductors

  • Editors: G. Benedek, A. Cavallini, W. Schröter

  • Series Title: NATO Science Series B:

  • DOI: https://doi.org/10.1007/978-1-4684-5709-4

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 1989

  • Softcover ISBN: 978-1-4684-5711-7Published: 16 April 2013

  • eBook ISBN: 978-1-4684-5709-4Published: 29 June 2013

  • Series ISSN: 0258-1221

  • Edition Number: 1

  • Number of Pages: X, 287

  • Number of Illustrations: 65 b/w illustrations

  • Topics: Solid State Physics, Spectroscopy and Microscopy

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