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Properties of Impurity States in Superlattice Semiconductors

  • Book
  • © 1988

Overview

Editors:
  1. C. Y. Fong

    1. University of California, Davis, Davis, USA

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  2. Inder P. Batra

    1. IBM Almaden Research Center, San Jose, USA

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  3. S. Ciraci

    1. Bikent University, Ankara, Turkey

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Part of the book series: NATO Science Series B: (NSSB, volume 183)

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Table of contents (26 chapters)

  1. Front Matter

    Pages i-xi
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  2. Growth Techniques and Characterizations of Superlattice Semiconductors

    1. Front Matter

      Pages xiii-xiii
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    2. Doping in Two Dimensions: The δ-Layer

      • A. Zrenner, F. Koch
      Pages 1-9

    3. Optical Measurements of Acceptor Concentration Profiles at GaAs/GaAlAs Quantum Well Interfaces

      • M. H. Meynadier
      Pages 11-18

    4. Molecular Beam Epitaxy of Ga0.99Be0.01As for very high Speed Heterojunction Bipolar Transistors

      • J. L. Liévin, F. Alexandre, C. Dubon-Chevallier
      Pages 19-28

    5. Progress Report on Molecular Beam Epitaxy of III–V Semiconductors — From Fibonacci to Monolayer Superlattices

      • L. Tapfer, J. Nagle, K. Ploog
      Pages 29-41

    6. Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition

      • Manijeh Razeghi, Philippe Maurel, Franck Omnes
      Pages 43-61

    7. Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy

      • A. Ourmazd
      Pages 63-74

  3. Deep and Shallow Impurity States

    1. Front Matter

      Pages 75-75
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    2. Deep Level Behaviour in Superlattice

      • Jacques C. Bourgoin, Michel Lannoo
      Pages 77-84

    3. Role of the Si Donors in Quantum and Ultraquantum Transport Phenomena in GaAs-GaAlAs Heterojunctions

      • André Raymond
      Pages 85-106

    4. Defects Characterization in GaAs-GaAlAs Superlattices

      • Dominique Vuillaume, Didier Stiévenard
      Pages 107-120

    5. Studies of the DX Centre in Heavily Doped n+GaAs

      • L. Eaves, J. C. Portal, D. K. Maude, T. J. Foster
      Pages 121-134

    6. Shallow and Deep Impurity Investigations: The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures

      • W. Prost, W. Brockerhoff, M. Heuken, S. Kugler, K. Heime, W. Schlapp et al.
      Pages 135-146

    7. Electronic States in Heavily and Ordered Doped Superlattice Semiconductors

      • Inder P. Batra, C. Y. Fong
      Pages 147-158

    8. Properties of Impurity States In n-i-p-i Superlattice Structures

      • Gottfried H. Döhler
      Pages 159-174

    9. Deep Impurity Levels in Semiconductors, Semiconductor Alloys, and Superlattices

      • John D. Dow, Shang Yuan Ren, Jun Shen
      Pages 175-187

    10. “Pinning” of Transition-Metal Impurity Levels

      • J. Tersoff
      Pages 189-191

  4. Quantum Well States

    1. Front Matter

      Pages 193-193
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    2. Theory of Impurity States in Superlattice Semiconductors

      • G. P. Srivastava
      Pages 195-218
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Keywords

About this book

A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im­ purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.

Editors and Affiliations

  • University of California, Davis, Davis, USA

    C. Y. Fong

  • IBM Almaden Research Center, San Jose, USA

    Inder P. Batra

  • Bikent University, Ankara, Turkey

    S. Ciraci

Bibliographic Information

  • Book Title: Properties of Impurity States in Superlattice Semiconductors

  • Editors: C. Y. Fong, Inder P. Batra, S. Ciraci

  • Series Title: NATO Science Series B:

  • DOI: https://doi.org/10.1007/978-1-4684-5553-3

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Plenum Press, New York 1988

  • Hardcover ISBN: 978-0-306-43009-1Due: 01 January 1989

  • Softcover ISBN: 978-1-4684-5555-7Published: 25 February 2012

  • eBook ISBN: 978-1-4684-5553-3Published: 06 December 2012

  • Series ISSN: 0258-1221

  • Edition Number: 1

  • Number of Pages: 351

  • Topics: Solid State Physics

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