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Analysis and Design of MOSFETs

Modeling, Simulation, and Parameter Extraction

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  • © 1998

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Table of contents (6 chapters)

Keywords

About this book

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Authors and Affiliations

  • Department of Electrical and Computer Engineering, University of Central Florida, Orlando, USA

    J. J. Liou

  • Electronics Engineering Department, University of Simon Bolivar, Caracas, Venezuela

    A. Ortiz-Conde, F. Garcia-Sanchez

Bibliographic Information

  • Book Title: Analysis and Design of MOSFETs

  • Book Subtitle: Modeling, Simulation, and Parameter Extraction

  • Authors: J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez

  • DOI: https://doi.org/10.1007/978-1-4615-5415-8

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Kluwer Academic Publishers 1998

  • Hardcover ISBN: 978-0-412-14601-5Published: 30 September 1998

  • Softcover ISBN: 978-1-4613-7473-2Published: 27 September 2012

  • eBook ISBN: 978-1-4615-5415-8Published: 06 December 2012

  • Edition Number: 1

  • Number of Pages: XIV, 349

  • Topics: Circuits and Systems, Electrical Engineering

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