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Resonant Tunneling in Semiconductors

Physics and Applications

  • Book
  • © 1991

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Editors:
  1. L. L. Chang

    1. IBM Thomas J. Watson Research Center, Yorktown Heights, USA

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  2. E. E. Mendez

    1. IBM Thomas J. Watson Research Center, Yorktown Heights, USA

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  3. C. Tejedor

    1. Universidad Autonoma de Madrid, Madrid, Spain

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Part of the book series: NATO Science Series B: (NSSB, volume 277)

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Table of contents (49 chapters)

  1. Front Matter

    Pages i-xiii
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  2. Introduction

    1. A Perspective of Resonant Tunneling

      • L. L. Chang
      Pages 1-15

  3. Materials and Band-Structure Effects

    1. Epitaxial Growth of Atomically Smooth GaAs/AlxGa1-xAs Interfaces for Resonant Tunneling

      • Klaus Ploog
      Pages 17-29

    2. MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices

      • H. Riechert, D. Bernklau, J.-P. Reithmaier, R. D. Schnell
      Pages 31-40

    3. Tunneling in Polytype InAs/AlSb/GaSb Heterostructures

      • K. F. Longenbach, L. F. Luo, W. I. Wang
      Pages 41-50

    4. Resonant Magnetotunneling in Type II Heterostructures

      • E. E. Mendez, H. Ohno, L. Esaki, W. I. Wang
      Pages 51-60

    5. Resonant Interband Tunneling

      • Maria A. Davidovich, E. V. Anda, C. Tejedor, G. Platero
      Pages 61-70

    6. Investigations on Resonant Tunneling and the Role of Interface Roughness Scattering in Quantum Wells

      • P. Guéret, C. Rossel
      Pages 71-83

    7. Resonant Tunneling of Holes in Strained Layers—SiGe/Si

      • Kang L. Wang, C. H. Chern
      Pages 85-94

    8. Resonant Tunneling of Holes in the Envelope-Function Approximation

      • Ralf Wessel
      Pages 95-105

    9. Temperature Dependence of Peak to Valley Current Ratio in Resonant Tunneling Double Barriers

      • O. Vanbésien, R. Bouregba, P. Mounaix, D. Lippens
      Pages 107-116

    10. Noise in Double-Barrier Resonant Tunneling Structures

      • Yuan P. Li, A. Zaslavsky, D. C. Tsui, M. Santos, M. Shayegan
      Pages 117-125

    11. The Role of Zener-Tunneling in the Subband Structure of Narrow-Gap Semiconductors

      • R. Sizmann, F. Koch
      Pages 127-135

    12. Band Structure Effects on Stark Levels and Real Space Electron Transfer in Perfect and Imperfect Quantum Wells and Superlattices

      • M. Jaros, J. P. Hagon, L. D. L. Brown
      Pages 137-148

    13. Finite Fields and Intervalley Scattering in Resonant Tunneling Systems

      • D. Y. K. Ko, J. C. Inkson, G. Edwards
      Pages 149-155

    14. Pressure Dependence of Negative Differential Resistance in AlGaAs/GaAs Double Barrier Resonant Tunnelling Devices up to 20 Kbar

      • D. G. Austing, P. C. Klipstein, A. W. Higgs, G. W. Smith, J. S. Roberts, G. Hill
      Pages 157-166

    15. Exciton, Hole and Electron Tunneling in Double Quantum Well Structures

      • C. Delalande
      Pages 167-173

    16. Studies on Tunneling Characteristics on Asymmetric GaAs/AlAs Double-Barrier Structures

      • Houzhi Zheng, Fuhua Yang
      Pages 175-181

    17. Phonon Emission Processes in (GaIn)As/(AlIn)As Double Barrier Diodes

      • A. Celeste, L. A. Cury, J. C. Portal, M. Allovon, D. K. Maude, L. Eaves et al.
      Pages 183-191

    18. Electron-Phonon Interaction in Resonant Tunneling Heterostructure

      • E. V. Anda, F. Flores
      Pages 193-200
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Keywords

About this book

This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit­ nessed in quantum structures in general. Resonant tunneling shares also the multi­ disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli­ cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res­ onant tunneling by providing a perspective of the field in the first article. This is fol­ lowed by discussions of different material systems with various band-structure effects.

Editors and Affiliations

  • IBM Thomas J. Watson Research Center, Yorktown Heights, USA

    L. L. Chang, E. E. Mendez

  • Universidad Autonoma de Madrid, Madrid, Spain

    C. Tejedor

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