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  • Conference proceedings
  • © 1995

Quantum Transport in Ultrasmall Devices

Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17–30, 1994, in II Ciocco, Italy

Part of the book series: NATO Science Series B: (NSSB, volume 342)

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Table of contents (44 papers)

  1. Front Matter

    Pages i-x
  2. Introduction to Quantum Transport

    • C. Jacoboni, D. K. Ferry
    Pages 1-39
  3. Traditional Modelling of Semiconductor Devices

    • Christopher M. Snowden
    Pages 41-76
  4. Fabrication of Nanoscale Devices

    • Mark A. Reed, Jeffrey W. Sleight
    Pages 111-132
  5. Artificial Impurities in Quantum Wires and Dots

    • A. S. Sachrajda, Y. Feng, G. Kirczenow, R. P. Taylor, B. L. Johnson, P. J. Kelly et al.
    Pages 133-140
  6. Mesoscopic Devices — What are They?

    • T. J. Thornton
    Pages 141-169
  7. Trajectories in Quantum Transport

    • John R. Barker
    Pages 171-180
  8. Two-Dimensional Dynamics of Electrons Passing Through a Point Contact

    • Carlo Jacoboni, Paolo Casarini, Alice Ruini
    Pages 181-190
  9. Localized Acoustic Phonons in Low Dimensional Structures

    • N. A. Bannov, V. V. Mitin, M. A. Stroscio
    Pages 191-200
  10. Conductance in Quantum Boxes: Interference and Single Electron Effects

    • A. S. Dzurak, M. Field, J. E. F. Frost, I. M. Castleton, C. G. Smith, C. -T. Liang et al.
    Pages 201-216
  11. Quantum Traffic Theory of Single Electron Transport in Nanostructures

    • John R. Barker, Sharif Babiker
    Pages 217-225
  12. Some Recent Developments in Quantum Transport in Mesoscopic Structures and Quantum Wells

    • L. Eaves, P. H. Beton, A. K. Geim, P. C. Main
    Pages 227-240
  13. Quantum Kinetics in Laser Pulse Excited Semiconductors

    • H. Haug, K. El Sayed, L. Bányai
    Pages 359-399
  14. Statistical Fluctuations in Devices

    • T. C. McGill, D. Z.-Y. Ting
    Pages 401-415

About this book

The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.

Reviews

`This work is outstanding....The charm of the work lies herein, that it presents in a coherent fashion a great deal of valuable material. I strongly recommend it in particular to graduate students in experimental semiconductor physics.'
Contemporary Physics

Editors and Affiliations

  • Arizona State University, Tempe, USA

    David K. Ferry

  • SRA, Inc., Glastonbury, USA

    Harold L. Grubin

  • University of Modena, Modena, Italy

    Carlo Jacoboni

  • Technical University of Denmark, Lyngby, Denmark

    Anti-Pekka Jauho

Bibliographic Information

Buy it now

Buying options

eBook USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access