Editors:
- Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics
- Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence
- Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs
- Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior
- Includes supplementary material: sn.pub/extras
Buy it now
Buying options
Tax calculation will be finalised at checkout
Other ways to access
This is a preview of subscription content, log in via an institution to check for access.
Table of contents (30 chapters)
-
Front Matter
-
Part I
-
Front Matter
-
-
Part II
-
Front Matter
-
About this book
Editors and Affiliations
-
Institute for Microelectronics, Technische Universität Wien, Wien, Austria
Tibor Grasser
Bibliographic Information
Book Title: Bias Temperature Instability for Devices and Circuits
Editors: Tibor Grasser
DOI: https://doi.org/10.1007/978-1-4614-7909-3
Publisher: Springer New York, NY
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer Science+Business Media New York 2014
Hardcover ISBN: 978-1-4614-7908-6
Softcover ISBN: 978-1-4939-5529-9
eBook ISBN: 978-1-4614-7909-3
Edition Number: 1
Number of Pages: XI, 810
Number of Illustrations: 283 b/w illustrations, 318 illustrations in colour
Topics: Circuits and Systems, Semiconductors, Electronics and Microelectronics, Instrumentation, Quality Control, Reliability, Safety and Risk