Overview
- Covers the fundamental principles behind nanoelectronics/microelectronics
- Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale
- Provides some case studies to understand the issue mathematically
- Includes supplementary material: sn.pub/extras
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Table of contents (9 chapters)
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Front Matter
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Back Matter
Keywords
About this book
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Authors and Affiliations
Bibliographic Information
Book Title: Fundamentals of Nanoscaled Field Effect Transistors
Authors: Amit Chaudhry
DOI: https://doi.org/10.1007/978-1-4614-6822-6
Publisher: Springer New York, NY
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer Science+Business Media New York 2013
Hardcover ISBN: 978-1-4614-6821-9
Softcover ISBN: 978-1-4939-4482-8
eBook ISBN: 978-1-4614-6822-6
Edition Number: 1
Number of Pages: XIV, 201
Number of Illustrations: 19 b/w illustrations, 102 illustrations in colour
Topics: Electronics and Microelectronics, Instrumentation, Electronic Circuits and Devices, Circuits and Systems, Nanoscale Science and Technology, Optical and Electronic Materials