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Microwave Semiconductor Devices

  • Book
  • © 1991

Overview

Authors:
  1. Sigfrid Yngvesson

    1. University of Massachusetts, Amherst, USA

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Part of the book series: The Springer International Series in Engineering and Computer Science (SECS, volume 134)

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Table of contents (13 chapters)

  1. Front Matter

    Pages i-xvii
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  2. Review of Semiconductor Physics and Devices

    • Sigfrid Yngvesson
    Pages 1-22

  3. Transferred Electron Devices (TED) — Gunn Devices

    • Sigfrid Yngvesson
    Pages 23-58

  4. IMPATT (Impact Avalanche Transit Time) Devices

    • Sigfrid Yngvesson
    Pages 59-101

  5. Tunneling Devices

    • Sigfrid Yngvesson
    Pages 103-126

  6. Fundamental Limitations on Power Output from Solid-State Microwave Devices

    • Sigfrid Yngvesson
    Pages 127-141

  7. Basic Properties and Circuit Aspects of Oscillators and Amplifiers Based on Two-Terminal Devices

    • Sigfrid Yngvesson
    Pages 143-181

  8. Power-Combining

    • Sigfrid Yngvesson
    Pages 183-206

  9. Review of Noise Processes and Noise Concepts Relevant to Microwave Semiconductor Devices

    • Sigfrid Yngvesson
    Pages 207-228

  10. Diode Applications to Microwave Frequency Conversion and Control

    • Sigfrid Yngvesson
    Pages 229-295

  11. MESFET Devices

    • Sigfrid Yngvesson
    Pages 297-362

  12. HFETs — Heterojunction Field Effect Transistors

    • Sigfrid Yngvesson
    Pages 363-415

  13. Bipolar Microwave Transistors

    • Sigfrid Yngvesson
    Pages 417-448

  14. Overview of Conventional and Novel Devices

    • Sigfrid Yngvesson
    Pages 449-463

  15. Back Matter

    Pages 465-471
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Keywords

About this book

We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de­ scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais­ sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro­ gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im­ portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.

Authors and Affiliations

  • University of Massachusetts, Amherst, USA

    Sigfrid Yngvesson

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